Results 111 to 120 of about 135,232 (227)
Graph embedding based label propagation for community detection in social networks. [PDF]
Meena SS, Sharma PC, Singh YP, Singh MP.
europepmc +1 more source
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li +7 more
wiley +1 more source
R2GDN: RepGhost based residual dense network for image super-resolution. [PDF]
Li T +7 more
europepmc +1 more source
The relationship between the doping induced microstructure and thermal conductivity changes is elucidated for conjugated polymers. Eight conjugated polymers with different doping systems are studied, showing varied thermal conductivity responses based on structural order.
Jiali Guo +13 more
wiley +1 more source
TVAE-RNA: ensemble-based RNA secondary structure prediction via transformer variational autoencoders. [PDF]
Mei X +5 more
europepmc +1 more source
The first cryo‐EM visualization and quantification of oriented Photosystem I (PSI) on single‐layer graphene is reported. Domain‐specific covalent anchoring of PSI, with the reducing side of the biophotocatalyst toward graphene, promotes three‐fold higher anodic photocurrent generation compared to a randomly physisorbed counterpart. This approach allows
Miriam Izzo +6 more
wiley +1 more source
An improved greedy equivalent search method based on relative entropy. [PDF]
Liu X +7 more
europepmc +1 more source
Thermal transport in Ru and W thin films is studied using steady‐state thermoreflectance, ultrafast pump–probe spectroscopy, infrared‐visible spectroscopy, and computations. Significant Lorenz number deviations reveal strong phonon contributions, reaching 45% in Ru and 62% in W.
Md. Rafiqul Islam +14 more
wiley +1 more source
QBrainNet: harnessing enhanced quantum intelligence for advanced brain stroke prediction from medical imaging. [PDF]
Priyadharshini M +5 more
europepmc +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source

