Results 121 to 130 of about 80,384 (191)

Biosupercapacitors for Human‐Powered Electronics

Advanced Functional Materials, EarlyView.
Biosupercapacitors are emerging as biocompatible and integrative energy systems for next‐generation bioelectronics, offering rapid charge–discharge performance and mechanical adaptability. This review systematically categorizes their applications from external to organ‐level systems and highlights their multifunctional roles in sensing, actuation, and ...
Suhyeon Kim, Seungho Baek, Woojung Jung, Hayeon Bae, Junyoung Mun, Yong Ho Kim, Sunkook Kim, Jung Ho Kim   +7 more
wiley   +1 more source

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

Advanced Functional Materials, EarlyView.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li, Zhiqiang Liao, Risa Kataoka, Md Sarker Shamim, Takeshi Kijima, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki   +7 more
wiley   +1 more source

DiCARN-DNase: enhancing cell-to-cell Hi-C resolution using dilated cascading ResNet with self-attention and DNase-seq chromatin accessibility data. [PDF]

Bioinformatics
Olowofila S, Oluwadare O.
europepmc   +1 more source

Microstructural Evolution Dominates the Changes in the Thermal Conductivity of Conjugated Polymers Upon Doping

Advanced Functional Materials, EarlyView.
The relationship between the doping induced microstructure and thermal conductivity changes is elucidated for conjugated polymers. Eight conjugated polymers with different doping systems are studied, showing varied thermal conductivity responses based on structural order.
Jiali Guo, Kai Xu, Jesika Asatryan, Matías Jesús Alonso‐Navarro, Osnat Zapata‐Arteaga, Mariavittoria Craighero, Aleksandr Perevedentsev, Renee Kroon, María Mar Ramos, José L. Segura, Jaime Martín, Christian Müller, Juan Sebastián Reparaz, Mariano Campoy‐Quiles   +13 more
wiley   +1 more source

Automatic generation of learning path for teaching informatics at university. [PDF]

MethodsX
Aliyeva A, Abbasov A.
europepmc   +1 more source

Stochastically Generated Digital Twins of 3D Solid‐State Electrolyte Architecture

Advanced Functional Materials, EarlyView.
Digital Twins of random porous tape‐cast solid‐state battery architectures across µm to mm feature sizes from FIB‐SEM to X‐Ray µCT, respectively. Abstract Solid‐state lithium batteries (SSBs) have the potential to overcome conventional Li‐ion batteries in performance and safety.
Jonathan O'Neill, Tanner Hamann, Keith Duncan, Eric Wachsman   +3 more
wiley   +1 more source

Causal insights into gestational diabetes mellitus. [PDF]

Front Endocrinol (Lausanne)
Zahoor S, Constantinou AC, O'Halloran F, O'Mahony L, O'Riordan M, Kgosidialwa O, Culliney L, Said Alhajri M, Hasanuzzaman M.   +8 more
europepmc   +1 more source

Unveiling Phonon Contributions to Thermal Conductivity and the Applicability of the Wiedemann—Franz Law in Ruthenium and Tungsten Thin Films

Advanced Functional Materials, EarlyView.
Thermal transport in Ru and W thin films is studied using steady‐state thermoreflectance, ultrafast pump–probe spectroscopy, infrared‐visible spectroscopy, and computations. Significant Lorenz number deviations reveal strong phonon contributions, reaching 45% in Ru and 62% in W.
Md. Rafiqul Islam, Pravin Karna, Niraj Bhatt, Sandip Thakur, Helge Heinrich, Daniel M. Hirt, Saman Zare, Christopher Jezewski, Rinus T.P. Lee, Kandabara Tapily, John T. Gaskins, Colin D. Landon, Sean W. King, Ashutosh Giri, Patrick E. Hopkins   +14 more
wiley   +1 more source

Porosity prediction from well logging data via a hybrid MABC-LSSVM model. [PDF]

PLoS One
Su W, Gao J, Wu W, Zhang H.
europepmc   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Advanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Yoonmyung Lee, Sungjoo Lee   +6 more
wiley   +1 more source