Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand +5 more
wiley +1 more source
Correction: Xiao et al. Self-Powered Ultraviolet Photodetectors Based on Conductive Polymers/Ga<sub>2</sub>O<sub>3</sub> Heterojunctions: A Review. <i>Polymers</i> 2025, <i>17</i>, 1384. [PDF]
Xiao Z +9 more
europepmc +1 more source
Carbon Nanostructures Derived through Hypergolic Reaction of Conductive Polymers with Fuming Nitric Acid at Ambient Conditions. [PDF]
Chalmpes N +10 more
europepmc +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
From innovation to clinic: Emerging strategies harnessing electrically conductive polymers to enhance electrically stimulated peripheral nerve repair. [PDF]
Borah R +3 more
europepmc +1 more source
We have developed DEX/GM, an all‐natural, personalizable hybrid vaccine designed by coating dendritic cell‐derived exosomes (DEX) onto tumor cell membranes (GM) for sustained prophylaxis against glioblastoma (GBM). ABSTRACT Glioblastoma (GBM), one of the most aggressive and lethal brain tumors, remains incurable with a poor clinical prognosis.
Shanshan Li +6 more
wiley +1 more source
Recent Advances in Conductive Polymers-Based Electrochemical Sensors for Biomedical and Environmental Applications. [PDF]
Pan Y +5 more
europepmc +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source

