Results 141 to 150 of about 155,906 (299)

First observation of beta-induced Alfvén eigenmode inside the edge magnetic island on the J-TEXT tokamak

open access: yesNuclear Fusion
Experiments conducted on the J-TEXT tokamak have provided the first evidence that the Beta-induced Alfvén Eigenmode (BAE) is localized inside the isolated helical flux tube of its edge m / n = 3/1 magnetic island. The observations show that the BAE forms
J. Yang   +27 more
doaj   +1 more source

All‐Cellulose‐Based Photonic Glitters

open access: yesAdvanced Functional Materials, EarlyView.
Uniform, disc‐shaped photonic CNC glitters with adjustable structural colors and diameters are fabricated on hydrophilic ethyl cellulose films using electrospray deposition. By employing patterned ethyl cellulose films with pre‐designed hydrophilic regions, photonic patterns can be created with these all‐cellulose‐based glitters, demonstrating their ...
Ting Wang   +5 more
wiley   +1 more source

Water Mobility within Compacted Clay Samples: Multi-Scale Analysis Exploiting 1H NMR Pulsed Gradient Spin Echo and Magnetic Resonance Imaging of Water Density Profiles

open access: yesACS Omega, 2018
Patrice Porion   +8 more
doaj   +1 more source

Photoswitchable Conductive Metal–Organic Frameworks

open access: yesAdvanced Functional Materials, EarlyView.
A conductive material where the conductivity can be modulated remotely by irradiation with light is presented. It is based on films of conductive metal–organic framework type Cu3(HHTP)2 with embedded photochromic molecules such as azobenzene, diarylethene, spiropyran, and hexaarylbiimidazole in the pores.
Yidong Liu   +5 more
wiley   +1 more source

Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction

open access: yesAdvanced Functional Materials, EarlyView.
This study examines the surface characteristics of AlInP (001), crucial for advanced solar cells and photoelectrochemical devices. Using theoretical modeling and experiments, it identifies how phosphorus‐rich and indium‐rich surfaces create mid‐gap states that pin the Fermi level and influence ultrafast electron dynamics.
Mohammad Amin Zare Pour   +11 more
wiley   +1 more source

Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan   +11 more
wiley   +1 more source

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