Results 171 to 180 of about 178,281 (234)

Biosupercapacitors for Human‐Powered Electronics

Advanced Functional Materials, EarlyView.
Biosupercapacitors are emerging as biocompatible and integrative energy systems for next‐generation bioelectronics, offering rapid charge–discharge performance and mechanical adaptability. This review systematically categorizes their applications from external to organ‐level systems and highlights their multifunctional roles in sensing, actuation, and ...
Suhyeon Kim, Seungho Baek, Woojung Jung, Hayeon Bae, Junyoung Mun, Yong Ho Kim, Sunkook Kim, Jung Ho Kim   +7 more
wiley   +1 more source

A breakdown-free block conjugate gradient method for large-scale discriminant analysis

Wenya Shi, Zhixiang Chen
openalex   +1 more source

Removal of Steroid Hormone Micropollutants by an Electrochemical Carbon Nanotube Membrane Flow‐Through Reactor: Role of Concentration and Degradation Mechanisms

Advanced Functional Materials, EarlyView.
A flow‐through electrochemical membrane reactor equipped with a carbon nanotube membrane eliminates the mass transfer limitation, achieving removals >97.5% for steroid hormone (SH) micropollutants through electrochemical adsorption and degradation, over a broad initial concentration varying from 50 to 106 ng L−1.
Siqi Liu, David Jassby, Andrea I. Schäfer   +2 more
wiley   +1 more source

A conjugate gradient method for the spectral partitioning of graphs

, 1997
N. P. Kruyt
openalex   +2 more sources

Cryo‐EM of Rationally Designed Photosystem I Nanoassembly on Graphene Validates Orientation‐Driven Enhancement of Photocatalytic Performance

Advanced Functional Materials, EarlyView.
The first cryo‐EM visualization and quantification of oriented Photosystem I (PSI) on single‐layer graphene is reported. Domain‐specific covalent anchoring of PSI, with the reducing side of the biophotocatalyst toward graphene, promotes three‐fold higher anodic photocurrent generation compared to a randomly physisorbed counterpart. This approach allows
Miriam Izzo, Margot Jacquet, Tomasz Góral, Marcin Strawski, Takayuki Fujiwara, Shin‐ya Miyagishima, Joanna Kargul   +6 more
wiley   +1 more source

Research on the Method of Electrical Impedance Tomography Based on Conjugate Gradient Iterative Algorithm

, 2018
Yuanli Yue, Xiaoyan Chen, Ze Liu, Fengzhi Dai   +3 more
openalex   +1 more source

Large Anomalous and Topological Hall Effect and Nernst Effect in a Dirac Kagome Magnet Fe3Ge

Advanced Functional Materials, EarlyView.
Fe3Ge, a Kagome‐lattice magnet, exhibits remarkable anomalous Hall and Nernst effects, with transverse thermoelectric conductivity surpassing or comaprable to some well‐known ferromagnets. First‐principles calculations attribute these to Berry curvature from massive Dirac gaps. Additionally, topological Hall and Nernst signals emerge from field‐induced
Chunqiang Xu, Shuvankar Gupta, Hengxin Tan, Hyeonhu Bae, Olajumoke Oluwatobiloba Emmanuel, Mingyu Xu, Yan Wu, Xiaofeng Xu, Pengpeng Zhang, Weiwei Xie, Binghai Yan, Xianglin Ke   +11 more
wiley   +1 more source

Computation and Performance Analysis of Existing Three Term Conjugate Gradient Method

, 2019
Nur Idalisa, Nur Idalisa
openalex   +1 more source

Unveiling Phonon Contributions to Thermal Conductivity and the Applicability of the Wiedemann—Franz Law in Ruthenium and Tungsten Thin Films

Advanced Functional Materials, EarlyView.
Thermal transport in Ru and W thin films is studied using steady‐state thermoreflectance, ultrafast pump–probe spectroscopy, infrared‐visible spectroscopy, and computations. Significant Lorenz number deviations reveal strong phonon contributions, reaching 45% in Ru and 62% in W.
Md. Rafiqul Islam, Pravin Karna, Niraj Bhatt, Sandip Thakur, Helge Heinrich, Daniel M. Hirt, Saman Zare, Christopher Jezewski, Rinus T.P. Lee, Kandabara Tapily, John T. Gaskins, Colin D. Landon, Sean W. King, Ashutosh Giri, Patrick E. Hopkins   +14 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Advanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Yoonmyung Lee, Sungjoo Lee   +6 more
wiley   +1 more source