Reducing the Metal-Graphene Contact Resistance through Laser-Induced Defects. [PDF]
Jangra V, Kataria S, Lemme MC.
europepmc +1 more source
Noncured Graphene Thermal Interface Materials for High-Power Electronics: Minimizing the Thermal Contact Resistance. [PDF]
Sudhindra S, Kargar F, Balandin AA.
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Polarizable Vanadium Dipoles Promote Water Dissociation on Vanadium‐Based Metal Organic Framework
The polarization of unpaired V 3d electrons weakens the H─O bond to improve water dissociation by the dual Vδ+:O─H and Pλ−:H─O coupling hydrogen bonds formation and relaxation. P@V‐MOF electrocatalyst shows low overpotentials (94 mV in acid, 178 mV in neutral, and 77 mV in alkaline solutions) with excellent stability for effective overall water ...
Xinjuan Liu +13 more
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Contact Resistance Optimization in MoS<sub>2</sub> Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications. [PDF]
Fa Y +7 more
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In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
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Role of induced-strain and interlayer coupling in contact resistance of VS<sub>2</sub>-BGaX<sub>2</sub> (X = S, Se) van der Waals heterostructures. [PDF]
Khan U +6 more
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Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
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Overestimation of Operational Stability in Polymer-Based Organic Field-Effect Transistors Caused by Contact Resistance. [PDF]
Sakamoto K +5 more
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Moiré band engineering in graphene/hexagonal boron nitride–based superlattices unlocks van Hove singularities (VHSs) for terahertz (THz) optoelectronics. Tuning the Fermi level near these singularities, associated with secondary neutrality points (SNPs), enhances the photothermoelectric response.
Leonid Elesin +16 more
wiley +1 more source
Corrosion and Interfacial Contact Resistance of NiTi Alloy as a Promising Bipolar Plate for PEMFC. [PDF]
Li Y +8 more
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