Results 271 to 280 of about 561,826 (342)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Fabrication of Pyridinic Nitrogen‐Functionalized Carbon Cloth for High‐Performance Iron‐Chromium Flow Batteries

open access: yesAdvanced Functional Materials, EarlyView.
The carbon cloth electrode with targeted pyridinic nitrogen doping, achieved via urea pyrolysis, effectively modulates the adsorption of Cr(II) species and enhances electron transfer, leading to significantly improved kinetics of the Cr(II)/Cr(III) reaction. The material demonstrates a high discharge capacity of 689.3 mAh and an energy efficiency of 72.
Jinfeng Yi   +9 more
wiley   +1 more source

Effect of tongue hygiene instruction on periodontal patients: an experimental study. [PDF]

open access: yesBMC Oral Health
Atarbashi-Moghadam F   +2 more
europepmc   +1 more source

Polymer Infiltration Into SURMOF Channels Enables Hydrophobic and Solid‐Like Slippery Functional Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
We report a polymer‐chain insertion strategy to fabricate pore‐threaded MOF thin films with precisely tuned surface chemistry and wettability. Grafting n‐alkane chains into the pillared layer Cu2(bdc)2(dabco) MOF thin film's vertical nanochannels enhances water stability, and induces hydrophobicity and lubricant‐free, solid‐like slippery behavior ...
Angana Borbora   +4 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

Combustion and Pyrolysis EA-IRMS Techniques to Determine the δ<sup>2</sup>H of Diamonds. [PDF]

open access: yesRapid Commun Mass Spectrom
Fourel F   +4 more
europepmc   +1 more source

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