Results 131 to 140 of about 8,126 (257)

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Pilot tests of continuous gas extraction with improved L-shaped wells from mining and goaf areas. [PDF]

Sci Rep
Zhang J, Qin Y, Li G, Ma H, Li G, Li G, Liu T, Li J, Ji C, Guo M.   +9 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Coupled Hysteresis and Variogram-Controlled Heterogeneity Effects on Underground Hydrogen Storage in Saline Aquifers. [PDF]

Energy Fuels
Mosallanezhad A, Jahanbakhsh A, Kalantariasl A, Maroto-Valer MM.   +3 more
europepmc   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Thoracoscopic repair of esophagogastric anastomotic fistula using a pedicled pleural flap: a case report and literature review. [PDF]

Front Oncol
Li Y, Deng Y, Zou J.
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Trees and water: smallholder agroforestry on irrigated lands in Northern India [PDF]

Trees / Populus deltoids / Agroforestry / Afforestation / Reforestation / Models / Water use / Water balance / Evapotranspiration / Precipitation / Remote sensing / Irrigation requirements ...
Zomer, Robert J., Bossio, Deborah A., Yuanjie, Li, Gupta, Diwan C., Trabucco, Antonio, Singh, Virendra P.   +5 more
core  

Wedge resection for pulmonary sequestration guided by indocyanine green fluorescence and 3-dimensional reconstruction. [PDF]

JTCVS Tech
Liang Q, Lin S, Chen Z, Guo Z, Gao Q, Yang X, Tian H, Wu Y, Zhong W, Nie Q.   +9 more
europepmc   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source