Results 201 to 210 of about 6,228,679 (287)

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

open access: yesAdvanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park   +7 more
wiley   +1 more source

Dirac Semimetallicity Enabled by Stripe Antiferromagnetism in Monolayer FeSe

open access: yesAdvanced Functional Materials, EarlyView.
In monolayer FeSe, stripe antiferromagnetic order selectively breaks mirror symmetry, enabling odd inter‐orbital hybridization between opposite‐parity Fe 3d states. This mechanism stabilizes symmetry‐protected Dirac nodes with nontrivial Wilson‐loop topology and edge states, accompanied by a strong orbital diamagnetic susceptibility as an experimental ...
Darius‐Alexandru Deaconu   +5 more
wiley   +1 more source

Feasibility study of core training in knee injury recovery. [PDF]

open access: yesTurk J Phys Med Rehabil
Wang Y   +5 more
europepmc   +1 more source

Programming Neuromorphic Plasticity Through Ionic and Electronic Coupling in Organic Electrochemical Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee   +9 more
wiley   +1 more source

Low‐Flicker‐Noise MoS2 Transistors Enabled by High‐κ Rare‐Earth Oxychlorides for Mixed‐Signal Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Single‐crystalline LaOCl and GdOCl form atomically abrupt, Cl‐terminated interfaces with MoS2, enabling near‐ideal switching and suppressed flicker noise. Carrier‐number‐fluctuation analysis yields effective noise‐derived interface trap densities of 1.15–1.94 × 1010 cm−2 eV−1, approaching hexagonal boron nitride levels with high‐κ coupling.
Chanho Lee   +10 more
wiley   +1 more source

Material Coupling in Hybrid Neuromorphic Devices: From Fundamentals to System‐Level Applications

open access: yesAdvanced Functional Materials, EarlyView.
Hybrid neuromorphic devices utilize heterointerfaces between emerging semiconductors, where charge transfer and trapping, ion or defect modulation, and photogating are translated into synaptic functions. This paper discusses coupling strategies that tailor interfacial electronic and ionic properties in organic semiconductors, metal oxides, two ...
Minsu So   +5 more
wiley   +1 more source

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