Results 191 to 200 of about 1,209,407 (340)
Do not let thermal drift and instrument artifacts deceive high‐temperature nanoindentation results. We compare classical Oliver–Pharr and automatic image recognition analyses across steels and a Ni alloy to quantify these effects. Accounting for artifacts reveals systematic softening with temperature, while Cr and Ni additions boost resistance ...
Velislava Yonkova +2 more
wiley +1 more source
Flexible dimethylsilylene bridges in silicon quantum dot-anthracene adducts promote triplet energy transfer. [PDF]
Lewis SG +10 more
europepmc +1 more source
Rail–bridge coupling element of unequal lengths for analysing train–track–bridge interaction systems
Ping Lou, Zhiwu Yu, F.T.K. Au
openalex +2 more sources
Creep Properties and Deformation Mechanism of Additively Manufactured NiAl‐CrMo Composites
Additively manufactured NiAl‐CrMo composites contain numerous interfaces and cell boundaries that control their creep response. At 700°C under high applied stress, creep is dominated by dislocation‐controlled power‐law mechanisms. At 800°C–900°C and lower stresses, creep is primarily diffusion‐controlled along cell boundaries.
Jan Vollhüter +9 more
wiley +1 more source
Low frequency coupling and mode interference in an inhomogeneous lattice of finite length
Jean Kergomard, Marc Pachebat
openalex +1 more source
The present study investigates recycling of NiTi shape memory alloys via vacuum induction melting. An ingot was synthesized from elemental Ni and Ti and subjected to three subsequent remelting cycles. Remelting increases process durations and impurity levels and adversely affects microstructures and functional properties.
Sakia Sophia Noorzayee +7 more
wiley +1 more source
A compact metasurface-based tri-band MIMO antenna with minimalist decoupling for multi-standard wireless devices. [PDF]
Gu Z, Guo M, Li S.
europepmc +1 more source
Valley coupling in finite-length metallic single-wall carbon nanotubes [PDF]
Wataru Izumida +2 more
openalex +1 more source
A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič +7 more
wiley +1 more source

