Results 171 to 180 of about 5,163,287 (193)
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo +10 more
wiley +1 more source
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Role of δ-ferrite in fatigue crack growth of AISI 316 austenitic stainless steel
Journal of Materials Science and Technology, 2022Shenghu Chen +2 more
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A short and long crack growth model based on 2-parameter driving force and crack growth thresholds
International Journal of Fatigue, 2020Ayhan Ince
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Mixed mode fatigue crack growth: A literature survey
Engineering Fracture Mechanics, 1996A Fatemi
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Modeling approach for a unified crack growth model in short and long fatigue crack regimes
International Journal of Fatigue, 2019Ayhan Ince
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