Results 111 to 120 of about 28,437 (265)

Enhancing Fatigue Crack Growth Resistance in Heterostructured Aluminum Bimetals by Tailored Interface Design

open access: yesAdvanced Engineering Materials, EarlyView.
Different Al/Al bimetals with a single engineered interface reveal how mechanical mismatch governs fatigue crack growth under cyclic loading. Additionally, loading–unloading–reloading tests link the microyielding behavior to the fatigue crack growth resistance, while crack‐path analysis reveals toughening mechanisms at the interface, highlighting ...
Sebastian Vollath   +2 more
wiley   +1 more source

Superlubricity and Corrosion Inhibition Properties of Solvate Ionic Liquids in Hybrid Carbon Fiber Reinforced Plastic–Steel Interfaces

open access: yesAdvanced Engineering Materials, EarlyView.
Solvate ionic liquids lubrication reduced the coefficient of friction by ∼60% compared to dry sliding, reaching steady‐state values as low as 0.04–0.05. Corrosion weight‐loss measurements in 1 M HCl further demonstrated significant inhibition behavior, with only 100 ppm of [Li(G3)][TFSI] (∼68.5 μL/L) reducing corrosion‐product weight loss by 63 ...
Sameh Dabees   +6 more
wiley   +1 more source

A Brezis-Nirenberg problem on hyperbolic spaces

open access: yesElectronic Journal of Differential Equations, 2019
We consider a Brezis-Nirenberg problem on the hyperbolic space $\mathbb{H}^n$. By using the stereographic projection, the problem becomes a singular problem on the boundary of the open ball $B_1(0)\subset \mathbb{R}^n$. Thanks to the Hardy inequality,
Paulo C. Carriao   +3 more
doaj  

Enhancing Low‐Temperature Performance of Sodium‐Ion Batteries via Anion‐Solvent Interactions

open access: yesAdvanced Functional Materials, EarlyView.
DOL is introduced into electrolytes as a co‐solvent, increasing slat solubility, ion conductivity, and the de‐solvent process, and forming an anion‐rich solvent shell due to its high interaction with anion. With the above virtues, the batteries using this electrolyte exhibit excellent cycling stability at low temperatures. Abstract Sodium‐ion batteries
Cheng Zheng   +7 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Nondegeneracy of the solutions for elliptic problem with critical exponent

open access: yesBoundary Value Problems
This paper deals with the following nonlinear elliptic equation: − Δ u = Q ( | y ′ | , y ″ ) u N + 2 N − 2 , u > 0 , in R N , u ∈ D 1 , 2 ( R N ) , $$ -\Delta u=Q(|y'|,y'')u^{\frac{N+2}{N-2}},\,\,u>0,\,\,\text{in}\,{ \mathbb{R}}^{N},\,\,u\in D^{1,2 ...
Qingfang Wang
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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