Results 221 to 230 of about 745,236 (302)
Element-Specific Sensitivity of Lanthanoid Ions to Chiral Crystal Fields in K3[Ln2(NO3)9] Probed by 4f-4f Circular Dichroism. [PDF]
Inomata Y, Mochizuki C, Kida T.
europepmc +1 more source
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian +1 more
wiley +1 more source
Mirror-Symmetric Organic Two-Dimensional Crystals for Alternative Photon Transport Pathways. [PDF]
Li WH +5 more
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Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Substrate-Assisted Flux Method for Robust Synthesis of Quantum-Grade Transition Metal Dichalcogenides. [PDF]
Li Y +16 more
europepmc +1 more source
Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
Recrystallization-Driven Formation of Single-Crystalline MoS<sub>2</sub> by Metal-Organic Chemical Vapor Epitaxy. [PDF]
Kandybka I +13 more
europepmc +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source

