Results 121 to 130 of about 336 (170)
Solution-processed Cu2ZnSn(S,Se)4 absorbers for thin film solar cells
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Visualization of Anion Vacancy Defect Annihilation in CZTSe Solar Cells by Hydrogen-Assisted Selenization with In Operando X-ray Nanoprobe Studies. [PDF]
Huang CY +7 more
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Vacuum, 2021
Abstract The (NaxCu1-x)2ZnSn(S,Se)4 alloy films with different Na concentrations were synthesized by using a facile and environmentally friendly sol-gel method. In this paper, we discuss the effect of Na content on the crystalline quality, and photo-electric properties of the films. The bandgap of (NaxCu1-x)2ZnSn(S,Se)4 is adjusted between 0.97 and 1.
Dongyue Jiang +6 more
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Abstract The (NaxCu1-x)2ZnSn(S,Se)4 alloy films with different Na concentrations were synthesized by using a facile and environmentally friendly sol-gel method. In this paper, we discuss the effect of Na content on the crystalline quality, and photo-electric properties of the films. The bandgap of (NaxCu1-x)2ZnSn(S,Se)4 is adjusted between 0.97 and 1.
Dongyue Jiang +6 more
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Journal of Alloys and Compounds, 2018
Abstract P-type solid solutions of indium (In) in kesterite Cu2ZnSn(S,Se)4 films (CZTSSe(In)) with In contents of 0–19.34 at% were prepared by In alloying with the kesterite Cu2ZnSn(S,Se)4 (CZTSSe) through a solution approach. It is found that the In substitutes for Sn to form InSn acceptor defect in the CZTSSe(In) in the In content range of 0–1.15 ...
Zhenyu Xiao +11 more
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Abstract P-type solid solutions of indium (In) in kesterite Cu2ZnSn(S,Se)4 films (CZTSSe(In)) with In contents of 0–19.34 at% were prepared by In alloying with the kesterite Cu2ZnSn(S,Se)4 (CZTSSe) through a solution approach. It is found that the In substitutes for Sn to form InSn acceptor defect in the CZTSSe(In) in the In content range of 0–1.15 ...
Zhenyu Xiao +11 more
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Screening of alkali elements in Cu2ZnSn(S,Se)4
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015Group-I dopants are known to benefit Cu(In,Ga)Se2. Although the exact mechanism is still debated, Na has been shown to improve a variety of device parameters. Due to the similarities between chalcopyrites and kesterites, it is believed that group-I dopants may have a similar effect on kesterites.
Andrew Collord, Hugh W. Hillhouse
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Science China Chemistry, 2015
The kesterite-structured semiconductor Cu2ZnSn(S,Se)4(CZTSSe) is prepared by spin coating a non-hydrazine precursor and annealing at Se atmosphere.Local electrical and optoelectronic properties of the CZTSSe thin-film are explored by Kelvin probe force microscopy and conductive atomic force microscopy.Before and after irradiation,no marked potential ...
Jiangjun Li +5 more
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The kesterite-structured semiconductor Cu2ZnSn(S,Se)4(CZTSSe) is prepared by spin coating a non-hydrazine precursor and annealing at Se atmosphere.Local electrical and optoelectronic properties of the CZTSSe thin-film are explored by Kelvin probe force microscopy and conductive atomic force microscopy.Before and after irradiation,no marked potential ...
Jiangjun Li +5 more
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Optical properties of Cu(In,Ga)Se2 and Cu2ZnSn(S,Se)4
Thin Solid Films, 2011The optical properties of CuInSe(2), CuGaSe(2), Cu(2)ZnSnS(4), and Cu(2)ZnSnSe(4) are investigated using three different first-principles methods, namely the generalized gradient approximation by P ...
Hanyue Zhao, Clas Persson
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Physics of the Solid State, 2017
Results of the study of structural and optical properties of Cu2ZnSn(S,Se)4 thin films obtained by sulfitation (selenization) of Cu2ZnSn films which were sputtered by target direct current magnetron sputtering using a stoichiometric Cu2ZnSn (99.99%) target are presented.
Solovan M. N. +8 more
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Results of the study of structural and optical properties of Cu2ZnSn(S,Se)4 thin films obtained by sulfitation (selenization) of Cu2ZnSn films which were sputtered by target direct current magnetron sputtering using a stoichiometric Cu2ZnSn (99.99%) target are presented.
Solovan M. N. +8 more
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Impact of capping during the formation of Cu2ZnSn(S,Se)4 thin films
Materials Science in Semiconductor Processing, 2016Abstract Major challenge for the fabrication of kesterite absorber thin films such as CZTSSe (Cu2ZnSn(S,Se)4) is the volatility of chalcogens. Material loss and poor morphology are two key issues during high temperature annealing, carried out for the formation of CZTSSe thin film absorber layers. The purpose of the present study is to investigate the
Bhagyashree Pani +2 more
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