Results 101 to 110 of about 21,776 (269)

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

open access: yesphysica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia   +3 more
wiley   +1 more source

Effects of TiAl Alloy as a Binder on Cubic Boron Nitride Composites. [PDF]

open access: yesMaterials (Basel), 2021
Liu Y, Zhang W, Peng Y, Fan G, Liu B.
europepmc   +1 more source

Substrate-induced half-metallic property in epitaxial silicene

open access: yes, 2019
For most practical applications in electronic devices, two-dimensional materials should be transferred onto semiconducting or insulating substrates, since they are usually generated on metallic substrates.
Deng, Kaiming   +3 more
core   +1 more source

Emerging p‐Block Metal‐Based Electrocatalysts for Energy Conversion

open access: yesSmall, EarlyView.
P‐block metal‐based catalysts have emerged as efficient and sustainable alternatives to precious metal electrocatalysts for energy conversion. This review comprehensively surveys diverse p‐block metal‐based architectures—including anisotropic and homogeneous systems—and systematically elucidates their roles in key electrocatalytic reactions, such as ...
Jack Jon Hinsch   +12 more
wiley   +1 more source

Thermal Stability of TiN Coated Cubic Boron Nitride Powder. [PDF]

open access: yesMaterials (Basel), 2021
Hering B   +3 more
europepmc   +1 more source

Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride / Metal Interface

open access: yes, 2018
Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO2. Here, we report two clear differences in their physical properties.
Hattori, Yoshiaki   +3 more
core   +1 more source

Gallium Nitride‐Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform

open access: yesSmall, EarlyView.
This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider   +7 more
wiley   +1 more source

Mechanism of nucleation and growth of cubic boron nitride thin films [PDF]

open access: gold, 2000
Dmitry V. Shtansky   +3 more
openalex   +1 more source

Absolute scaling of small‐ and wide‐angle X‐ray scattering images recorded with short duration X‐ray pulses on a large area fiber‐taper X‐ray detector

open access: yesJournal of Synchrotron Radiation, EarlyView.
An X‐ray scattering setup designed to capture small‐ and wide‐angle X‐ray scattering on a single, large area detector features a partially transmissive beamstop that facilitates non‐invasive recording of X‐ray beam position and intensity during acquisition of X‐ray scattering images.
Hyun Sun Cho   +3 more
wiley   +1 more source

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