Results 1 to 10 of about 326,759 (245)

Stability of cubic zirconia and of stoichiometric zirconia nanoparticles

Physics of the Solid State, 2006
Using the electron density functional method, it is shown that the oxygen sublattice of cubic zirconia is unstable with respect to random displacements of oxygen atoms, which results in general instability of bulk cubic zirconia at low temperatures.
V. G. Zavodinsky, A. N. Chibisov
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ChemInform Abstract: NITRIDE‐STABILIZED CUBIC ZIRCONIA

Chemischer Informationsdienst, 1978
AbstractDie kubische Hochtemperaturphase von ZIO, wird nicht nur durch Oxid‐Zusätze, sondern auch durch Nitride stabilisiert: 10‐30 rnol% AIN, Si3N4, TiN oder ZrN bewirken ein Ansteigen des Molenbruchs der kubischen ZrO,‐Phase auf 0.3 ‐ 0.75, 1.5 mol‐% Mg3N2 erhöhen ihn auf 1.0.
Nils Claussen, Rudolf Wagner, Ludwig J. Gauckler, Günter Petzow   +3 more
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ChemInform Abstract: ZIRCONIA‐STABILIZED CUBIC EUROPIA

Chemischer Informationsdienst, 1982
AbstractDas System EuzOg‐lrOz wird unter besonderer Berücksichtigung des Zusammensetzungsbereichs von 0‐33 mol‐% ZrO" das im Hinblick auf die Anwendung als Neutronen‐Absorber in schnellen Reaktoren von Interesse ist, untersucht.
I. F. Ferguson, D. A. Moore
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Hydrothermal degradation of cubic zirconia

Acta Materialia, 2003
Abstract Tetragonal ZrO2 undergoes a tetragonal to monoclinic transformation with the presence of water or water vapor when annealed at relatively low temperatures (65–400 °C); such a transformation has been shown to be due to the annihilation of oxygen vacancies. Nevertheless, cubic ZrO2 has always been presumed to be stable under similar conditions.
Xin Guo, Xin Guo, Jiaqing He
openaire   +2 more sources

Failure analysis of high performance polymers and new generation cubic zirconia used for implant-supported fixed, cantilevered prostheses.

Clinical Implant Dentistry and Related Research, 2019
BACKGROUND The load-to-failure performance of computer-assisted design and computer-assisted manufacturing (CAD-CAM) high performance polymers (HPP) and new generation cubic zirconia (Zir) material when used with titanium (Ti) bases for implant-supported
B. Yılmaz, Burcu Batak, R. Seghi
semanticscholar   +1 more source

Microwave sintering of cubic zirconia

Ceramics International, 2001
Microwave processing is of considerable interest because of its potential applications in the ceramic industry. The present investigation describes the technique for the sintering of yttria stabilised cubic zirconia. Significant advantage in terms of higher density of the ceramics at lower heat work is noted compared to the conventional radiant heat ...
Ram Prasad, D. D. Upadhyaya, Abhijit Ghosh, K.R. Gurumurthy   +3 more
openaire   +2 more sources

Structural Transformation in Cubic Zirconia

Journal of the American Ceramic Society, 1987
The structure of CaO‐stabilized cubic zirconia has been investigated by X‐ray diffraction at high temperatures and pressures up to 1000°C and ∼35 GPa, using a diamond‐anvil cell interfaced with aYAG laser heating system. At ∼1000°C and 15 GPa, the cubic phase transforms directly into an orthorhombic phase with the PbCl2 structure.
Subba Rao Usha Devi, Murli H. Manghnani, Li Chung Ming   +2 more
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Mechanical loss of cubic zirconia

Journal of Alloys and Compounds, 2000
Cubic zirconia can be stabilized by doping with lower valent oxides such as Y2O3 or CaO. Oxygen vacancies are then created as charge compensating defects. Mechanical loss measurements were performed in the temperature range 300–1600 K using both free decaying (3 Hz, 3 kHz) and forced vibrations (10−2–10 Hz).
Manfred Weller, A. Lakki, B. Damson
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Optical properties of cubic stabilized zirconia

Solid State Communications, 1992
Optical absorption across the fundamental edge and the associated photoluminescence, have been studied in single crystals of yttrium stabilized zirconia (YSZ) of varying yttrium concentration. The results allow discrimination of a region of intrinsic transitions (above 5.2 eV) from a low energy region, where disorder-induced transitions are dominating.
Camagni P, Galinetto P, Samoggia G, Zema, N   +4 more
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ChemInform Abstract: SILICON ON CUBIC ZIRCONIA

Chemischer Informationsdienst, 1983
AbstractBez. der Herstellung von IC‐Halbleiter‐Bauteilen hoher Geschwindigkeit, Dichte und Strahlungsbeständigkeit wurde das epitaktische Wachstum von Si‐Einkristall‐Filmen ( l um) auf(lOO)‐, (l l0)‐ und (l l l)‐Flächen von Y2O3‐ stabilisierten ZrO2‐Einkristallen durch CVD mit SiH4‐Pyrolyse (950‐l075°C) untersucht.
J. E. Mee, I. Golecki, Jane J. Yang, L. A. Moudy, H. M. Manasevit   +4 more
openaire   +2 more sources