Results 221 to 230 of about 713,845 (330)

Thermodynamic Prediction of TaC CVD Process in TaCl5-C3H6-H2 System

open access: hybrid, 2018
Hyun-Mi Kim   +4 more
openalex   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

open access: yesAdvanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj   +3 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

Association of inflammatory bowel disease with cardiovascular disease, and the mediating role of inflammation: a matched-cohort study. [PDF]

open access: yesTher Adv Gastroenterol
Geng J   +7 more
europepmc   +1 more source

Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2

open access: yesAdvanced Electronic Materials, EarlyView.
Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx‐only devices, these heterostructures demonstrate higher switching voltages, faster switching speeds, and reduced variability.
Jimin Lee   +9 more
wiley   +1 more source

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