Association Between NHHR and Future Cardiovascular Disease Among Patients With CKM Stages 0-3: A Nationwide Prospective Cohort Study. [PDF]
Huang Y +6 more
europepmc +1 more source
Thermal management of power electronics components using the CVD diamond
Zhongda Zhang
openalex +1 more source
Thermodynamic Prediction of TaC CVD Process in TaCl5-C3H6-H2 System
Hyun-Mi Kim +4 more
openalex +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Effectiveness of Conservative Treatment on Chronic Venous Disease Symptoms and Quality of Life in Patients with Type 2 Diabetes: Results from a Subanalysis of the VEIN STEP Observational Study. [PDF]
Ulloa JH +6 more
europepmc +1 more source
Friction and Wear Properties of Carbon Nitride Synthesized Using Microwave Plasma CVD
Ippei Tanaka, Yukihiro Sakamoto
openalex +1 more source
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash +4 more
wiley +1 more source
Association of inflammatory bowel disease with cardiovascular disease, and the mediating role of inflammation: a matched-cohort study. [PDF]
Geng J +7 more
europepmc +1 more source
Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2
Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx‐only devices, these heterostructures demonstrate higher switching voltages, faster switching speeds, and reduced variability.
Jimin Lee +9 more
wiley +1 more source

