Electrical and Structural Characterization of Web Dendrite Crystals [PDF]
Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependency on structural defects, and its unique change during hot processing.
Dumas, K. A. +2 more
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The effects of impurities on the performance of silicon solar cells [PDF]
The major factors that determine the tolerable concentrations of impurities in silicon feedstock for solar cells used in power generation are discussed in this report.
Yamakawa, K. A.
core +1 more source
Coefficients of Thermal Expansion in La3Ga5SiO14 and Ca3TaGa3Si2O14 Crystals. [PDF]
Roshchupkin D, Kovalev D.
europepmc +1 more source
A study of beryllium and beryllium-lithium complexes in single crystal silicon [PDF]
When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 MeV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-MeV level is due to a more complex beryllium configuration than the 191 ...
Crouch, R. K. +2 more
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Floating Particles in the Melt during the Growth of β-Ga2O3 Single Crystals Using the Czochralski Method [PDF]
Yingying Liu +5 more
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Heat flow control and segregation in directional solidification: Development of an experimental and theoretical basis for Bridgman-type growth experiments in a microgravity environment [PDF]
Within the framework of the proposed research, emphasis was placed on application of magnetic fields to semiconductor growth systems. It was found that magnetic fields up to 3 kGauss do not affect the growth behavior nor the macro-segregation behavior in
Witt, A. F.
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Development of radiation hardened lithium- doped solar cells Final report [PDF]
Fabrication techniques to improve initial efficiency and radiation tolerance of radiation hardened lithium-diffused silicon solar ...
Kendall, D. L., Vineyard, R. A.
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Czochralski crystal growth: Modeling study [PDF]
The modeling study of Czochralski (Cz) crystal growth is reported. The approach was to relate in a quantitative manner, using models based on first priniciples, crystal quality to operating conditions and geometric variables. The finite element method is
Dorsey, D. +3 more
core +1 more source
Isoelectronic Bound-Multiexciton Systems in Thermally-Treated Czochralski Silicon
L. Jeyanathan +2 more
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