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Jan Czochralski—father of the Czochralski method
Journal of Crystal Growth, 2002Abstract A critical review of papers concerning the invention of the “Czochralski method” is presented. It is beyond all doubt that this method of pulling single crystals from the melt should be named after the Polish scientist, chemist and metallurgist J. Czochralski. The recent curious supposition by H.J.
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Acta Crystallographica Section C Crystal Structure Communications, 1995
The structure of Czochralski-grown lanthanum strontium tetraoxogallate, LaSrGaO 4 , a K 2 Ni 2 F 4 -type compound, has been redetermined by X-ray diffraction. The improved quality of the crystals resulted in a higher precision in the determination of the geometric parameters than reported previously [Ruter & Muller-Buschbaum (1990). Z. Anorg.
J. F. Britten +5 more
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The structure of Czochralski-grown lanthanum strontium tetraoxogallate, LaSrGaO 4 , a K 2 Ni 2 F 4 -type compound, has been redetermined by X-ray diffraction. The improved quality of the crystals resulted in a higher precision in the determination of the geometric parameters than reported previously [Ruter & Muller-Buschbaum (1990). Z. Anorg.
J. F. Britten +5 more
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Czochralski grown Ga2O3 crystals
Journal of Crystal Growth, 2000Abstract We report on the successful growth of β-Ga2O3 single crystals using the Czochralski method. Model calculations show that the gas phase consists of Ga2O, GaO or Ga independent of the ratio of oxygen and Ar or N2. We find that for growing single crystals the evaporation has to be suppressed by a finite amount of oxygen. A CO2/Ar gas atmosphere
Y. Tomm, P. Reiche, D. Klimm, T. Fukuda
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Journal of Crystal Growth, 1983
Abstract The importance of Czochralski (CZ) grown silicon as a basic material for solid-state electronics is outlined. After that, a short review is given of the different possibilities for growing silicon crystals and the history of Czochralski technique. Details of the CZ pulling procedure are discussed.
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Abstract The importance of Czochralski (CZ) grown silicon as a basic material for solid-state electronics is outlined. After that, a short review is given of the different possibilities for growing silicon crystals and the history of Czochralski technique. Details of the CZ pulling procedure are discussed.
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Germanium in Czochralski Silicon
Defect and Diffusion Forum, 2005The behaviors of isovalent impurities doped in Czochralski (CZ) silicon crystal have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about germanium in CZ silicon is presented. The disturbance of silicon crystal lattice in and the influence on the mechanical strength due to germanium ...
De Ren Yang, Jiahe Chen
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1982
Solid-state electronics has become the key to modern technology and its importance is likely to keep growing. Monocrystalline silicon is almost exclusively used as both “brains” and “heart” of today’s electronics, namely for logic, control and power devices.
Werner Zulehner, Diethart Huber
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Solid-state electronics has become the key to modern technology and its importance is likely to keep growing. Monocrystalline silicon is almost exclusively used as both “brains” and “heart” of today’s electronics, namely for logic, control and power devices.
Werner Zulehner, Diethart Huber
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Czochralski growth of Ba2Ge2TiO8
Journal of Crystal Growth, 1976Abstract Single crystal boules of Ba 2 Ge 2 TiO 8 were grown by the Czochralski technique from a stoichiometric melt. The boules were typically 8 mm in diameter and 15 mm in length with a slight yellowish color. Crystal growth parameters and charaterization methods are described.
L.E. Drafall, K.E. Spear
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