Results 211 to 220 of about 19,534 (248)
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Czochralski growth of Ba6Ti2Nb8O30
Materials Letters, 1983Abstract Ba 6 Ti 2 Nb 8 O 30 (BTN) single crystals have been grown by the Czochralski method under a reducing atmosphere. Crystals grown in an oxidizing atmosphere were opaque polycrystals. It was found that BTN decomposes into several phases at temperatures above 1330°C.
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Nitrogen in Czochralski silicon
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2002Nitrogen is an interesting element in Czochralski (CZ) silicon used for microelectronic industry. In recent, nitrogen has attracted much attention due to its influence on microdefects, intrinsic gettering and mechanical strength in the larger diameter CZ silicon, This paper gives a review of nitrogen in CZ silicon which has an effect on the mechanical ...
null Deren Yang, null Duanlin Que
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1965
Abstract : The program explores the possibility of growing high optical quality LaAlO3 by the Czochralski method. The techniques developed for ruby growth were found to be directly translatable to LaAlO3 with no apparent limitations imposed by the use of a crucible. Undoped and doped (Cr(3+), Eu(3+)) crystals of various orientations were grown.
O. H. Nestor, H. Fay, C. D. Brandle
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Abstract : The program explores the possibility of growing high optical quality LaAlO3 by the Czochralski method. The techniques developed for ruby growth were found to be directly translatable to LaAlO3 with no apparent limitations imposed by the use of a crucible. Undoped and doped (Cr(3+), Eu(3+)) crystals of various orientations were grown.
O. H. Nestor, H. Fay, C. D. Brandle
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Bifurcation in axisymmetric Czochralski natural convection
The Physics of Fluids, 1988Numerical simulations using a finite volume method with primitive variables formulation are presented for a natural convection flow in the Czochralski melt. In the limit of very small Prandtl numbers it is shown that unsteadiness appears in the form of regular oscillations for sufficiently high values of the Rayleigh number.
Bottaro, A., Zebib, A.
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Materials Research Bulletin, 1967
Abstract Commercial CuCl was found to be unsatisfactory for crystal growth. Purification was achieved both by chemical and by zone-melting techniques. CuCl ingots pulled from pure melts were found to be strained, highly twinned, and polycrystalline because of the wurtizite-to-zincblende phase transition.
W.R. Wilcox, R.A. Corley
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Abstract Commercial CuCl was found to be unsatisfactory for crystal growth. Purification was achieved both by chemical and by zone-melting techniques. CuCl ingots pulled from pure melts were found to be strained, highly twinned, and polycrystalline because of the wurtizite-to-zincblende phase transition.
W.R. Wilcox, R.A. Corley
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Effect of oxygen concentration on diffusion length in Czochralski and magnetic Czochralski silicon
Materials Science and Technology, 1995This paper reports some new results on the influence of oxygen aggregation phenomena in the 450-850°C range on the diffusion length of minorities in both Czochralski (Cz) and magnetic Czochralski silicon. The features of the oxygen aggregation phenomena were studied by infrared spectroscopy at 20 K and the effect of these processes on the diffusion ...
S. Binetti +4 more
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Czochralski silicon radiation detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006An overview is presented of some of the recent results concerning the suitability of Czochralski silicon to High Energy Physics (HEP) radiation detectors. It has been shown that an elevated oxygen concentration within the bulk silicon of detectors offers increased radiation hardness to charged particle radiation.
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Czochralski growth of Li3N crystals
Journal of Crystal Growth, 1978Abstract Large Li 3 N single crystals were grown by the Czochralski method. Starting material for crystal growth was synthesized from the elements. Decomposition of the melt was prevented by use of a stagnant N 2 atmosphere ( p = 700 Torr ). Tungsten was found to be the most suitable crucible material which was not severely attacked by the Li 3 N ...
E. Schönherr, G. Müller, E. Winckler
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Journal of Crystal Growth, 2004
The first oxide grown using the Czochralski technique (CaWO4) was in 1960. Since that time, the Czochralski technique has become the method of choice for the growth and production of many bulk oxide materials used in the electronics and optical industries, e.g. lasers, substrates, scintillators, nonlinear and passive optical devices.
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The first oxide grown using the Czochralski technique (CaWO4) was in 1960. Since that time, the Czochralski technique has become the method of choice for the growth and production of many bulk oxide materials used in the electronics and optical industries, e.g. lasers, substrates, scintillators, nonlinear and passive optical devices.
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