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1993
If the crystal dimension (its radius) R and the crystallization front position relative to the melt-free surface h are regarded as variable parameters in the Czochralski technique, for stability study (1.3) will include (1.39) and (1.48): $$\delta \dot R = {A_{RR}}\delta R = {A_{Rh}}\delta h$$ (2.1) $$\delta \dot h = {A_{^{hR}}}\delta R +
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If the crystal dimension (its radius) R and the crystallization front position relative to the melt-free surface h are regarded as variable parameters in the Czochralski technique, for stability study (1.3) will include (1.39) and (1.48): $$\delta \dot R = {A_{RR}}\delta R = {A_{Rh}}\delta h$$ (2.1) $$\delta \dot h = {A_{^{hR}}}\delta R +
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The Czochralski Method ‐ where we are 90 years after Jan Czochralski’s invention
Crystal Research and Technology, 2007AbstractThe Czochralski method, i.e. pulling a crystal from the melt, became the most important technology for the production of large semiconductor (Si, GaAs, InP, GaP …) and optical crystals (oxides, CaF2…). The present status is achieved by a profound analysis of the mechanisms of heat and species transport which are relevant for the stability of ...
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Professor Jan Czochralski and the Czochralski award
physica status solidi (b), 2011openaire +1 more source
Macroscopic Czochralski growth
Journal of Crystal Growth, 1981A. Van der Hart, W. Uelhoff
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