Results 21 to 30 of about 19,534 (248)
Calibration and Irradiation Study of the BGO Background Monitor for the BEAST II Experiment [PDF]
, 2017 Beam commissioning of the SuperKEKB collider began in 2016. The Beam Exorcism for A STable experiment II (BEAST II) project is particularly designed to measure the beam backgrounds around the interaction point of the SuperKEKB collider for the Belle II ...
Brown, André EX +11 more
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Studia Historiae Scientiarum, 2019 The article is a response to the polemical commentary by Paweł E. Tomaszewski, PhD, published in the current volume of the journal Studia Historiae Scientiarum 18 (2019), regarding the author’s earlier article on the work of the Institute of Metallurgy ...
Mariusz W. Majewski
doaj +1 more source
Raman and IR spectra of pure and doped forsterite single crystals [PDF]
Science of Sintering, 2009 Forsterite single crystals were grown by the Czochralski technique in air. The lattice parameters were determined by X-ray power diffraction. The IR and Raman spectra of pure and doped (V3+, V5+, and Ni4+) Mg2SiO4 single crystals were measured at room ...
Golubović A. +2 more
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Melt Flow and Dopant Distribution During the Growth of Si and Ge Crystal: A Review
Chemical Engineering Transactions, 2018 Segregation occurs for most of dopants employed in crystal growth, leading to variation of dopant concentration and properties along the crystal. This article presented a review of recent research on melt flow and dopant distribution during the growth of
Tinghui Zhang +2 more
doaj +1 more source
Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C [PDF]
, 1991 Boron-doped Czochralski silicon samples with [B]~1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched.
E. C. Lightowlers +7 more
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, 2021 Explicaci n del proceso Czochralski en la fabricaci n de obleas de silicio monocristalino.
openaire +1 more source
Single crystals of bismuth silicon oxide grown by the Czochralski technique and their characterisation [PDF]
Journal of the Serbian Chemical Society, 1999 Single crystals of Bi12SiO20 were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. X-Ray measurements were performed on powdered samples
ANDREJA VALCIC +4 more
doaj +2 more sources
Cost of Czochralski wafers as a function of diameter [PDF]
, 1980 The impact of diameter in the range of 10 to 15 cm on the cost of wafers sliced from Czochralski ingots was analyzed. Increasing silicon waste and decreasing ingot cost with increasing ingot size were estimated along with projected costs.
Kachare, A., Leipold, M. H., Radics, C.
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The growth of ZnO crystals from the melt
, 2008 The peculiar properties of zinc oxide (ZnO) make this material interesting for very different applications like light emitting diodes, lasers, and piezoelectric transducers.
Bates +30 more
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The optical properties of bismuth germanium oxide single crystals [PDF]
Journal of the Serbian Chemical Society, 2000 Bi12GeO20 single crystals were grown by the Czochralski technique. Suitable polishing and etching solutions were determined. Reflection spectra were recorded in the wave numbers range 205000 cm1, and compared with the spectra of Bi12SiO20 single ...
ANDREJA VALCIC +3 more
doaj +3 more sources