Results 31 to 40 of about 19,534 (248)
, 2013 The pseudo-cubic lattice parameters of rare-earth (RE) scandate, REScO3, single crystals grown by the Czochralski technique with RE=Dy to Pr lie between about 3.95 and 4.02 Angstrom.
Bernhagen, M. +8 more
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Revue des Énergies RenouvelablesIn this work, we conducted a 3D numerical simulation to investigate the shape of the melt-solid interface during the crystal growth of silicon using the Czochralski technique, which is widely employed in photovoltaic applications.
Hanane Azoui +3 more
doaj +1 more source
Structure and properties of (Nd,Sr)(Al,Ta)O3 (NSAT) substrate crystals
Acta Crystallographica Section B, EarlyView.An emerging cubic substrate material (Nd,Sr)(Al,Ta)O3 (NSAT) has been structurally and spectroscopically characterized revealing that the nominally cubic NSAT consists of partially developed cubic superstructure domains with doubled unit‐cell parameter.
Roberts Blukis +10 more
wiley +1 more source
Obtaining and investigation of the structural features of the LiNbO3 : Zn (2,12 wt. % Zn) single crystal [PDF]
Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2018 We carried out preparation of homogeneously doped charge LiNbO3:Zn ([Zn] = 2,44 wt. %) of congruent composition (ratio [Li]/[Nb]=0,96). From this charge a LiNbO3:Zn (Zn ~ 2.12 wt. %) single crystal by the Czochralski method was grown.
L.A. Bobreva +3 more
doaj +1 more source
Electromigration process for the purification of molten silicon during crystal growth [PDF]
, 1982 A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by
Shlichta, P. J.
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IEEE Journal of the Electron Devices Society, 2018 Gettering sinks for metallic impurities formed by carbon-cluster ion implantation in epitaxial silicon wafers have been investigated using technology computer-aided design and atom probe tomography (APT).
Ayumi Onaka-Masada +8 more
doaj +1 more source
Phase diagram analysis and crystal growth of solid solutions Ca_{1-x}Sr_xF_2
, 2007 The binary phase diagram CaF$_2$--SrF$_2$ was investigated by differential thermal analysis (DTA). Both substances exhibit unlimited mutual solubility with an azeotropic point showing a minimum melting temperature of T_\mathrm{min}=1373^{\circ}$C for the
Burnett +9 more
core +1 more source
Electronic Materials with Wide Band Gap: Recent Developments [PDF]
, 2014 The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II.
Klimm, D.
core +4 more sources
Advanced Science, Volume 13, Issue 13, 3 March 2026.The interplay between magnetic ordering and crystal electric field (CEF) excitations plays a pivotal role in defining the low‐energy electrodynamics of quantum materials. By probing the temperature‐dependent THz conductivity in a rare‐earth‐based metallic ferromagnet, we uncover a microscopic connection between localized and itinerant electrons ...
Payel Shee +11 more
wiley +1 more source
Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga2O3
Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.Temperature‐dependent photoluminescence and first‐principles calculations reveal self‐trapped hole migration as the microscopic origin of thermal quenching in α‐ and β‐Ga2O3. The low migration barrier in α‐Ga2O3 enables defect trapping and enhances blue luminescence, while the higher barrier in β‐Ga2O3 preserves ultraviolet emission at elevated ...
Nima Hajizadeh +11 more
wiley +1 more source