Results 41 to 50 of about 19,534 (248)
Hydrodynamics and heat exchange of crystal pulling from melts. Part I: Experimental studies of free convection mode [PDF]
This work is a brief overview of experimental study results for hydrodynamics and convective heat exchange in thermal gravity capillary convection modes for the classic Czochralski technique setup obtained at the Institute of Thermophysics, Siberian ...
Vladimir S. Berdnikov
doaj +3 more sources
Successive Orthorhombic Distortions in Kagome Metals by Molecular Orbital Formation
Orthorhombic distortions in kagome metals break the symmetry required for exotic charge order. Synchrotron X‐ray diffraction of NdRu3Si2 reveals successive orthorhombic transitions driven by molecular orbital formation between kagome layers. The frustrated kagome lattice hosts degenerate patterns of kagome dimers whose short‐range correlations produce ...
Ryo Misawa +15 more
wiley +1 more source
The Cu(II)[12‐MCCu(II)N(Shi)‐4] metallacrown complex (CuCu4) is studied to examine how geometric transformations affect magnetic coupling between copper spins by using ultraviolet photoemission spectroscopy and DFT calculations for the bulk phase and CuCu4 adsorbed on Au(111). While adsorption minimally affects tDOS, exchange coupling constants between
Ariyan Tavakoli +11 more
wiley +1 more source
Data‐Driven Multi‐Objective Optimization of Large‐Diameter Si Floating‐Zone Crystal Growth
This study presents a surrogate‐based Multi‐Objective Optimization framework for Floating Zone silicon crystal growth. An ensemble of Neural Networks is trained on simulation data and combined with Genetic Algorithms to explore trade‐offs in process parameters.
Lucas Vieira +3 more
wiley +1 more source
Numerical study of thermal stress during different stages of silicon Czochralski crystal growth
In this paper, the influence of various crystal heights to the crystal/melt interface shape and thermal stresses distribution in the large diameter (300 mm) of the silicon single crystal growth in a Czochralski process was studied numerically.
A. Benmeddour, S. Meziani
doaj
This paper presents incorporating superconducting horizontal magnetic field, a very effective way with low power consumption and high field strength. To improve crystal quality of large diameter Czochralski monocrystalline silicon (CZ-Si) when it grows ...
Jing Zhang, Jun-Chao Ren, Ding Liu
doaj +1 more source
High temperature thermoelectric efficiency in Ba8Ga16Ge30 [PDF]
The high thermoelectric figure of merit (zT) of Ba8Ga16Ge30 makes it one of the best n-type materials for thermoelectric power generation. Here, we describe the synthesis and characterization of a Czochralski pulled single crystal of Ba8Ga16Ge30 and ...
Christensen, M. +3 more
core +1 more source
Modelling InSb Czochralski Growth [PDF]
A model of Czrochralski crystal growth is presented that reduces the issue of finding the temperature distribution as a Stefan problem. From the temperature distribution the corresponding distribution of thermal stress inside the growing crystal can be computed.
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In situ observation of VLS growth in a confined microreactor reveals various growth modes of monolayer TMDCs, including abnormal ribbon growth and particle‐driven growth. The confined space and precursor balance influence droplet behavior and growth dynamics, offering new insights into the controlled synthesis of TMDCs via the VLS mechanism.
Hiroo Suzuki +6 more
wiley +1 more source
Germanium Doped Czochralski Silicon [PDF]
We have illustrated the effect of germanium doping in CZ silicon on mechanical strength, oxygen-related donors, oxygen precipitation and void defects. It has been established that the mechanical strength of silicon wafers could be improved by intended germanium doping, which benefits the improved production yield of wafers.
Jiahe, Chen,, Deren, Yang,
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