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The fluctuations of Zn impurity Concentration Profile in KCl crystals growth by various pulling rate Czochralski method [PDF]

open access: yesProgress in Physics of Applied Materials, 2023
Single crystals of KCl(Zn) using different amounts of Zn impurity (0.5 and 1.0 mole percents) with and without rotating crucible were grown by Czochralski method.
Heidar Faripour   +2 more
doaj   +1 more source

Measurements of heat capacity and thermal conductivity of β-Ga2O3 and β-(AlxGa1–x)2O3 bulk crystals grown by the Czochralski method [PDF]

open access: yesНаучно-технический вестник информационных технологий, механики и оптики, 2021
One of the application fields of bulk gallium oxide crystals is the manufacture of substrates for epitaxial growth of device structures for power electronics and optoelectronics in the Ga2O3/(AlxGa1–x)2O3 system.
Dmitrii A. Bauman   +10 more
doaj   +1 more source

Preparation of high purity germanium single crystal and analysis of dislocation density

open access: yesShenzhen Daxue xuebao. Ligong ban, 2022
High purity germanium detector plays an important role in the field of radiation detection. High purity germanium with 13N purity and dislocation density between 100 ~ 10 000 cm-2 was successfully prepared through zone melting purification and single ...
HAO Xin   +7 more
doaj   +1 more source

Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method

open access: yesCrystals, 2021
As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth system,
Xia Tang   +6 more
doaj   +1 more source

Three-dimensional numerical simulation of temperature and flow fields in a Czochralski growth of germanium [PDF]

open access: yesJournal of Heat and Mass Transfer Research, 2018
For a Czochralski growth of Ge crystal, thermal fields have been analysed numerically using the three-dimensional finite volume method (FLUENT package).
M.H. Tavakoli, Zahra Taheri Ghahfarokhi
doaj   +1 more source

Comparative evaluation of RANS eddy-viscosity turbulence models for calculating the silicon melt convection in crystal growth systems

open access: yesSt. Petersburg Polytechnical University Journal: Physics and Mathematics, 2022
In the paper, the results of RANS calculations of turbulent convection in silicon melt, obtained using several eddy-viscosity turbulence models, have been compared with previously published ILES eddy-resolving calculation data for similar conditions.
Borisov Dmitry, Kalaev Vladimir
doaj   +1 more source

Chap. 6 : Properties of Na 0.5Bi0.5TiO3 and Na0.5Bi0.5 TiO3-based single crystals

open access: yesMaterials and Devices, 2021
Most studies of ferroelectric materials were focused on polycrystalline ceramics. However, it is difficult to improve their properties significantly (particularly piezoelectric one) due to grain/grain boundaries, compositional homogeneity, isotropic ...
Jan Suchanicz   +5 more
doaj   +6 more sources

From vaseline to the silicon revolution: the unusual history of the greatest Polish discovery that changed the world

open access: yesStudia Historiae Scientiarum, 2017
In August 2016 exactly one hundred years passed from the discovery of the Czochralski method of single crystal pulling, named after Jan Czochralski (1885–1953), the Polish chemist and metallurgist.
Paweł E. Tomaszewski
doaj   +1 more source

Destabilization of free convection by weak rotation [PDF]

open access: yes, 2011
This study offers an explanation of a recently observed effect of destabilization of free convective flows by weak rotation. After studying several models where flows are driven by a simultaneous action of convection and rotation, it is concluded that ...
A. Yu. Gelfgat   +7 more
core   +2 more sources

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