Results 91 to 100 of about 8,900 (218)
Silicon materials task of the low cost solar array project (part 2) [PDF]
Purity requirements for solar cell grade silicon material was developed and defined by evaluating the effects of specific impurities and impurity levels on the performance of silicon solar cells.
Blais, P. D. +6 more
core +4 more sources
Czochralski crystal growth: Modeling study [PDF]
The modeling study of Czochralski (Cz) crystal growth is reported. The approach was to relate in a quantitative manner, using models based on first priniciples, crystal quality to operating conditions and geometric variables. The finite element method is
Dorsey, D. +3 more
core +1 more source
Solar silicon via the Dow Corning process [PDF]
Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz.
Dosaj, V. D., Hunt, L. P.
core +4 more sources
Growth and EPR properties of ErVO4 single crystals
Single crystals of ErVO4 were grown by the Czochralski method under ambient pressure in a nitrogen atmosphere. Obtained crystals were transparent with strong pink coloring.
Leniec Grzegorz +5 more
doaj +1 more source
Separation and Recovery of Refined Si from Al-Si Melt by Modified Czochralski Method. [PDF]
Li J +7 more
europepmc +1 more source
Growth and Characterization of Yb: CALYGLO Crystal for Ultrashort Pulse Laser Applications
Yb:CALYGLO crystals with a dopant concentration of 5 at.% were successfully grown using the Czochralski method. The crystal samples were extensively studied to analyze their structure, room temperature and low temperature spectra, and laser properties ...
Zebin Wang +8 more
doaj +1 more source
The study of single crystals for space processing and the effect of zero gravity [PDF]
A study was undertaken to analyze different growth techniques affected by a space environment. Literature on crystal growth from melt, vapor phase and float zone was reviewed and the physical phenomena important for crystal growth in zero-gravity ...
Lal, R. B.
core +1 more source
The equipment for production SI-GaAs by LEC method
A brief description and comparison of the liquid-encapsulated Czochralski (LEC) method with other growth techniques is presented, as well as its role in the development of semi-insulating GaAs technology. Information is provided on modern developments in
G. P. Kovtun, A. P. Shcherban’
doaj
Thick film silicon growth techniques [PDF]
One inch wide silicon ribbons up to 14 inches long have been produced from graphite dies. Several different techniques have been employed to improve the semiconductor purity of silicon.
Bates, H. E. +3 more
core +1 more source
Charge carrier mobility in the configuration restructuring divacancies in silicon [PDF]
Temperature dependence of the mobility of electrons and holes in p-Si, cultivated by Czochralski method and бестигельной zone melting, after irradiation by fast neutrons reactor was considered. In the framework of the elaborated model of clusters defects
A. P. Dolgolenko
doaj

