Results 161 to 170 of about 8,900 (218)

Jan Czochralski—father of the Czochralski method

Journal of Crystal Growth, 2002
Abstract A critical review of papers concerning the invention of the “Czochralski method” is presented. It is beyond all doubt that this method of pulling single crystals from the melt should be named after the Polish scientist, chemist and metallurgist J. Czochralski. The recent curious supposition by H.J.
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On Silicon Single Crystal Growth by Czochralski Method

IETE Journal of Research, 1970
The technique of silicon crystal pulling has been described and the results on typical crystals are presented. The transverse impurity distribution in the crystals has been discussed. Crystals almost free of dislocations have been grown by Dash technique.
W. N. Borle, S. Tata, S. K. Varma
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Growth of CaTiSiO5 by the Czochralski method

Journal of Crystal Growth, 1969
Abstract Crystals of CaTiSiO5 suitable for physical property measurements have been grown by the Czochralski method. Best results were obtained with relatively high rotation rates (100–150 rpm) and a linear growth rate of 0.15 cm/hr. The crystals are monoclinic with space group P21/n, the symmetry previously observed for anhydrous synthetic CaTiSiO5,
W.S. Brower, C.R. Robbins
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Ninetieth anniversary of Czochralski method

Journal of Alloys and Compounds, 2007
In 2006 we celebrate the 90th anniversary of the Czochralski pulling method. Professor Jan Czochralski invented this method and used it for measuring of the crystallization velocity of metals. In the 1950s of the 20th century his method was adopted for growing large single crystals of semiconductors on an industrial scale.
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ZnGeP2 grown by the liquid encapsulated Czochralski method

Journal of Applied Physics, 1993
The growth of ZnGeP2 by the liquid encapsulated Czochralski method is reported for the first time herein. Large boules of ZnGeP2, with diameters up to 40 mm and weights up to 400 gm were grown by Czochralski pulling from B2O3 encapsulated melts under high pressure (20 atm Ar) using axial gradients ≤120 °C/cm.
H. M. Hobgood, T. Henningsen, R. N. Thomas, R. H. Hopkins, M. C. Ohmer, W. C. Mitchel, D. W. Fischer, S. M. Hegde, F. K. Hopkins   +8 more
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Growth of Bi2ZnOB2O6 crystal by the Czochralski method

Journal of Crystal Growth, 2010
A sizeable single crystal of Bi2ZnOB2O6 (BZB) with dimensions of 65 x 35 x 30 mm(3) has been grown along the c-axis direction by the Czochralski method. Differential thermal analysis (DTA) results show that BZB melts congruently at 692 degrees C. The density and hardness of the BZB crystal have been measured, the measured density is in agreement with ...
Feng Li, Shilie Pan, Xueling Hou, Zhongxiang Zhou   +3 more
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The Czochralski Method ‐ where we are 90 years after Jan Czochralski’s invention

Crystal Research and Technology, 2007
AbstractThe Czochralski method, i.e. pulling a crystal from the melt, became the most important technology for the production of large semiconductor (Si, GaAs, InP, GaP …) and optical crystals (oxides, CaF2…). The present status is achieved by a profound analysis of the mechanisms of heat and species transport which are relevant for the stability of ...
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Growth of BaBrI Crystals by the Czochralski Method

Crystal Growth & Design, 2020
BaBrI crystals activated by rare-earth-metal ions are promising scintillation materials. In this work, were research the aspects of growing such crystals by the Czochralski method.
Aleksey Rupasov, Alexey Shalaev, Roman Shendrik   +2 more
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Growth of tellurium crystals by the Czochralski method

Journal of Crystal Growth, 1973
Abstract Single crystals of high purity tellurium up to one inch in diameter and several inches long were grown by by the Czochralski method from zone refined material. The process was carried out in an argon atmosphere with precise programmed control of r.f. heating. The vertical pull rate normally used was 1.5 cm/hr with rotation of the seed and of
R. Dufresne, C.H. Champness
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The historical development of the Czochralski method

Journal of Crystal Growth, 2014
Abstract The Czochralski technique is currently the most developed method for growing bulk single crystals. The high technical level and degree of process automation make this technique the method of choice for growing and producing high-quality bulk single crystals, such as silicon, a variety of oxides, fluorides and multielement compounds.
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