Results 171 to 180 of about 8,900 (218)
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Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method
Japanese Journal of Applied Physics, 1999A new method for growing silicon crystals by using electromagnetic force to rotate the melt without crucible rotation has been developed. We call it electromagnetic Czochralski (EMCZ) growth. An electromagnetic force in the azimuthal direction is generated in the melt by the interaction between an electric current (I) through the melt ...
Masahito Watanabe +2 more
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Morphology of Ruby Crystals Grown by Czochralski’s Method
1975A ruby rod grown by Czochralski’s method usually has a rounded lustrous surface; the only prominent crystallographic form readily identified visually is the pinacoid.
G. K. Geranicheva +2 more
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Growth of cubic KTa1−xNbxO3 crystal by Czochralski method
Journal of Crystal Growth, 2006Abstract Cubic KTa 1− x Nb x O 3 (KTN) single crystals with different compositions have been grown by the Czochralski technique in a KTaO 3 –KNbO 3 solid-solution system. The growth habit, morphological features, and other basic properties of the KTN crystal are discussed.
Xuping Wang +4 more
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Growth of InSb1-xBix single crystals by Czochralski method
Journal of Crystal Growth, 1972Abstract Because of the semi-metallic character of InBi, one can hope to reduce the InSb gap when introducing Bi into Sb sites. The InSb1-xBix compounds seem suitable for utilisation in the middle infra-red detection field. A method of preparing InSb1-xBix single crystals is described.
B. Joukoff, A.M. Jean-Louis
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ChemInform, 2008
AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.
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AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.
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Growth of Cr:LiCaAlF6 and Cr:LiSrAlF6 by the Czochralski method
Journal of Crystal Growth, 2000Abstract Single crystals of chromium-doped LiCAF and LiSAF can be grown from nearly stoichiometric melts of the components LiF, AlF 3 , CrF 3 and CaF 2 or SrF 2 , respectively, by the Czochralski method. The optical quality of LiSAF crystals is usually better, as LiCAF contains more scattering particles. This different behavior can be attributed to
D Klimm, G Lacayo, P Reiche
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Growth Conditions for Crystal Pulling by the Czochralski Method
Israel Journal of Chemistry, 1971AbstractThe balance of heat flow at the growth interface during Czochralski crystal pulling is discussed, taking into consideration the curvature of the interface. Mechanisms are postulated according to which sudden and slow changes in the pulling rate influence the growth process and detachment of the crystal from the melt.
R. Grajower, I. Roman
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Mixed Crystals: μ-PD vs. Czochralski Method
2007The purpose of this chapter is to demonstrate, through a case study approach, how beneficial the μ-PD method can be for growing mixed crystals.
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Dislocations of salol crystals grown by the Czochralski method
Crystal Research and Technology, 1985AbstractCrystals of salol were grown by the Czochralski method in three different pulling directions to examine the crystallographic orientation effect of the seed. They were characterized by the etch pit method and X‐ray projection topography.It was found that the dislocation density was 2 × 103−1 × 104/cm2 and that the configuration of dislocations ...
T. Inoue, H. Komatsu, W. Q. Jim
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Macroscopic Defects in Crystals Grown by Czochralski’s Method
1975Many modern techniques require large optically perfect crystals almost entirely free from macroscopic defects, especially for laser purposes.
V. M. Garmash +2 more
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