Results 61 to 70 of about 8,900 (218)

On‐Chip Perovskite Coolers

Advanced Materials Technologies, Volume 11, Issue 1, 8 January 2026.
Scaling of 3D‐integrated electronics exacerbates thermal bottlenecks, motivating solid‐state on‐chip cooling beyond convection and immersion. This perspective reviews optical refrigeration, electroluminescent cooling, and thermoelectrics for localized, vibration‐free heat removal.
Huilong Liu, Manaswini Bhamidimarri, Shubhra Bansal   +2 more
wiley   +1 more source

“The Thermal Wave” in Technology of Crystal Growth from the Melt [PDF]

Журнал нано- та електронної фізики, 2013
It was found that the temperature fluctuations at the interface crystal-melt are the main reason for the formation of single crystals inhomogeneity grown by the Czochralski method.
V.G. Kosushkin, S.L. Kozhitov, Yn.N. Parkhomenko, L.V. Kozhitov, L.M. Cherjakov   +4 more
doaj  

Electronic Materials with Wide Band Gap: Recent Developments [PDF]

, 2014
The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II.
Klimm, D.
core   +4 more sources

First‐Principles Investigation of the T‐ and M‐Centers in Silicon Using Meta‐GGA Functionals

Advanced Theory and Simulations, Volume 9, Issue 1, January 2026.
The relaxed structure for (a) T‐center and (b) M‐center. The calculations on the T‐center demonstrate excellent agreement with the HSE06, reinforcing the efficiency of meta‐GGA approaches for accurate defect characterization in Si. The M‐center is introduced, revealing promising quantum optical properties.
Petros‐Panagis Filippatos, Navaratnarajah Kuganathan, Alexander Chroneos   +2 more
wiley   +1 more source

Czochralski Growth, Magnetic Properties and Faraday Characteristics of CeAlO₃ Crystals

Crystals, 2019
CeAlO3 crystals were grown in different growth atmospheres by the Czochralski method. The lattice parameters and space group of CeAlO3 crystal were determined by Rietveld structure refinement of X-ray diffraction (XRD) data. The influence of Ce4+ ions in
Feiyun Guo, Qiyuan Li, Huaimin Zhang, Xiongsheng Yang, Zhen Tao, Xin Chen, Jianzhong Chen   +6 more
doaj   +1 more source

Flexible Crystals, Polymorph Selection and Interface Engineering for Organic Electronics: How New Discoveries and Established Knowledge Can Provide New Stimuli for Research Into Organic Semiconducting Single Crystals

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
This work reviews recent advances in Organic Semiconducting Single Crystals (OSSCs), focusing on mechanical flexibility for robust devices, polymorph control for precise phase selection, and interface engineering with self‐assembled monolayers to improve alignment and performance.
Alessando Fraleoni‐Morgera, Siddharth Joshi, Neal Hickey, Silvano Geremia   +3 more
wiley   +1 more source

Crystal Growth and Glass-Like Thermal Conductivity of Ca3RE2(BO3)4 (RE = Y, Gd, Nd) Single Crystals

Crystals, 2017
Crystal growth and thermal properties of binary borates, Ca3RE2(BO3)4 (RE = Y, Gd, Nd), are considered promising crystals for laser applications. These single crystals were grown by the Czochralski method.
L. V. Gudzenko, M. B. Kosmyna, A. N. Shekhovtsov, W. Paszkowicz, A. Sulich, J. Z. Domagała, P. A. Popov, S. A. Skrobov   +7 more
doaj   +1 more source

Dependence of the critical temperature of laser-ablated YBa2Cu3O(7-delta) thin films on LaAlO3 substrate growth technique [PDF]

Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films.
Bhasin, Kul B., Miranda, Felix A., Warner, Joseph D.   +2 more
core   +1 more source

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

, 2017
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3 ...
Arehart, Aaron R., Brenner, Mark, Hwang, Jinwoo, Johnson, Jared, Joishi, Chandan, Krishnamoorthy, Sriram, Lodha, Saurabh, McGlone, Joe, Rajan, Siddharth, Xia, Zhanbo, Zhang, Yuewei   +10 more
core   +1 more source

Optimization of High‐κ HfO2 Transistor Dielectrics by Atomic Layer Deposition as an Enabler of Novel Thin‐Film Circuits and Sensors

Advanced Physics Research, Volume 5, Issue 1, January 2026.
We explore the integration of atomic layer deposited (ALD) HfO2 dielectric films with solution‐processed In2O3 thin‐film transistors (TFTs) for a silicon chip‐free temperature sensor label. A voltage divider circuit is integrated with a supercapacitor power source, a thermal sensor, and an irreversible visual indicator (IVI), allowing for temperature ...
Matin Forouzmehr, Hamed Pourkheirollah, Fabio Leite, Elin Howard, Sunil Kumar Behera, Amit Tewari, Jarmo Laakso, Kimmo Lahtonen, Cesar A. T. Laia, A. Jorge Parola, Phillipe Marrec, Donald Lupo, Paul. R. Berger   +12 more
wiley   +1 more source