Results 1 to 10 of about 6,977 (216)

Optical properties of Dy:YCa4O(BO3)3 crystal grown by the Czochralski technique [PDF]

Materials Research Express, 2021
Dy ^3+ -doped YCa _4 O(BO _3 ) _3 (Dy:YCOB) crystal was successfully grown by the Czochralski technique. The absorption cross section at 453 nm was 0.28 × 10 ^–21 cm ^2 , that is related to the ^6 H _15/2  →  ^4 I _15/2 transition.
Zhangli Shi, Qingsong Song, Jian Liu, Huili Tang, Qingguo Wang, Yanyan Xue, Xiaodong Xu, Jun Xu   +7 more
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Luminescence and scintillation characterization of Silver doped KCl single crystal grown by Czochralski technique for photonic applications [PDF]

Nanochemistry Research, 2019
In this study, the scintillation and optical properties of pure and silver doped potassium chloride (KCl:Ag) single crystals were reported. Pure and doped KCl bulk single crystals with a good optical quality and free from cracks were grown from the melt ...
Sanaz Alamdari, Mohammad Hemmati, Majid Jafar tafreshi, Morteza Sasani ghamsari, Hosein Afarideh, Aghil Mohammadi, Yoon sang Kim, Mohammad Hosein Majles Ara   +7 more
doaj   +2 more sources

Growth of 100 mm indium antimonide single crystals by modified Czochralski technique [PDF]

Modern Electronic Materials, 2021
Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches.
Roman Yu. Kozlov, Svetlana S. Kormilitsina, Elena V. Molodtsova, Eugene O. Zhuravlev   +3 more
doaj   +4 more sources

Research Paper: Numerical Simulation of Thermo-elastic Stresses in Germanium Crystal Grown by Czochralski Technique during Different Lengths of Crystal [PDF]

فیزیک کاربردی ایران, 2021
In the process of crystal growth by Czochralski technique, lower part and core of the crystal are warmer than other parts of crystal and its environment, which leads to expansion in different parts of the crystal.
Mehdi Jamebozorgi, Mohammad Hossein Tavakoli   +1 more
doaj   +2 more sources

Single crystals of bismuth silicon oxide grown by the Czochralski technique and their characterisation [PDF]

Journal of the Serbian Chemical Society, 1999
Single crystals of Bi12SiO20 were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. X-Ray measurements were performed on powdered samples
ANDREJA VALCIC, RADOS GAJIC, STEVAN DJURIC, SLOBODANKA NIKOLIC, ALEKSANDAR GOLUBOVIC   +4 more
doaj   +4 more sources

Adjustment of oxygen transport phenomena for Czochralski silicon crystal growth [PDF]

Heliyon
During silicon crystal growth, oxygen, a well-known major impurity, affects the final silicon wafer's mechanical and electrical properties. This study focused on regulation of discharge of different concentrations of oxygen from the quartz crucible into ...
Amir Reza Ansari Dezfoli, Zary Adabavazeh   +1 more
doaj   +2 more sources

Growth of diopside (CaMgSi2O6) single crystal by the Czochralski technique

GEOCHEMICAL JOURNAL, 2006
For the purpose of growing diopside (CaMgSi2O6) single crystals with high quality and high homogeneity from a melt, a Czochralski method has been applied. Using this method, a colorless-transparent diopside single crystal with a composition close to stoichiometric and approximately 15 mm in diameter by 70 mm in length was grown.
MOTOO ITO, MASANA MORIOKA
openaire   +3 more sources

Analysis of μ-Czochralski Technique Using Two-Dimensional Crystallization Simulator

Journal of Crystallization Process and Technology, 2012
μ-Czochralski technique has been analyzed using two-dimensional crystallization simulator. It is observed that the temperature is relatively uniform in the entire Si region after the laser irradiation because the heat conductivity of the Si region is much higher than that of the underneath SiO2.
Kuniaki Matsuki, Ryusuke Saito, Shuji Tsukamoto, Mutsumi Kimura, Ryoichi Ishihara   +4 more
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New high-Z detectors based on YAlO3:Bi3+ for joint use with tissue equivalent BeO in tandem OSL dosimeter [PDF]

Scientific Reports
The work introduces a new type of UV-emitting high-Z OSL detectors based on YAlO3:Bi3+ (YAP: Bi) perovskite. Two kinds of YAP: Bi solid state detectors have been fabricated and compared to BeO Thermalox®995 chips.
Yaroslav Zhydachevskyy, Vasyl Stasiv, Oleksandr Poshyvak, Sergii Ubizskii, Zuzanna Pawłowska, Yuliia Rumiantseva, Magdalena Baran, Halyna Zhydachevska, Marek Berkowski, Andrzej Suchocki   +9 more
doaj   +2 more sources

Growth of oriented C11b MoSi2 bicrystals using a modified Czochralski technique [PDF]

Journal of Crystal Growth, 1999
Oriented bicrystals of pure C11b MoSi2 have been grown in a tri-arc furnace using the Czochralski technique. Two single crystal seeds were used to initiate the growth. Each seed had the orientation intended for one of the grains of the bicrystals, which resulted in a 60° twist boundary on the (110) plane. Seeds were attached to a water-cooled seed rod,
Chu, F., Garrett, J.D., McClellan, K.J., J.R., Michael, Mitchell, T.E., Peralta, P.   +5 more
openaire   +2 more sources