Results 191 to 200 of about 7,016 (252)

Czochralski crystal growth assisted by axial vibrational control technique

Journal of Crystal Growth, 2010
Abstract A novel configuration of axial vibration control (AVC) technique applied to Czochralski (CZ) crystal growth process by submerging an oscillating baffle into the melt under the crystal has been developed. The growth setup with a transparent furnace and crucible was fabricated to visualize the growth process.
I.Ch. Avetissov, A.P. Sadovskii, E.A. Sukhanova, E.V. Zharikov, A.I. Belogorokhov, B.N. Levonovich   +5 more
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Growth of sapphire and ruby by the Czochralski technique

Materials Research Bulletin, 1966
Abstract An r.f. furnace and control equipment that are suitable for growing single crystals of refractory oxides, such as Al2O3, by the Czochralski technique is described and examples of sapphire and ruby boules grown using this equipment are shown. Thoria is employed throughout the furnace.
J.J. Rubin, L.G. Van Uitert
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Physical properties of K2ZnBr4 crystal grown by Czochralski technique

Ferroelectrics, 1994
Abstract The large, transparent single crystals of K2ZnBr4 were grown by the Czochralski technique in N2 atmosphere. The crystals grown by this method showed different phases from the crystals grown by the solution method, because those possess the supercooled states while cooling from the growing temperature.
Se Young Jeong, Jae Han Cha, Min Su Jang, Seong Hyun Kim, Hee Tae Jeong   +4 more
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Properties of Li2MoO4 single crystals grown by Czochralski technique

Journal of Crystal Growth, 2014
Absract 50 mm diameter Li 2 MoO 4 crystals were grown by the Czochralski technique. The crystals had 80–95% transmission in 300–1100 nm spectrum range. Raman spectra of crystals cut along and transversely to the crystallographic C -axis were measured for the first time.
Olga Barinova, Svetlana Kirsanova, Andrey Sadovskiy, Igor Avetissov   +3 more
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Nd:YVO4 crystal growth by Czochralski technique with a submerged plate

Journal of Crystal Growth, 2009
Abstract This paper is to investigate the growth of Nd:YVO 4 (yttrium vanadate) crystal by the modified Czochralski technique with a submerged plate. Numerical studies are performed to examine melt convection and heat transfer during Nd:YVO 4 growth.
H. Zhang, H.S. Fang, L.L. Zheng, Z.G. Hu, G.C. Zhang   +4 more
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BGO crystals grown by a low thermal gradient Czochralski technique

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996
Abstract A low thermal gradient version of the Czochralski technique was successfully adopted for growing BGO crystals. Now the technique allows us to grow water transparent, radiation hard crystals of up to 150 mm in diameter and up to 400 mm in length.
Ya.V Vasiliev, R.R Akhmetshin, Yu.A Borovliev, D.N Grigoriev, V.A Gusev, V.N Shlegel, V.P Smakhtin   +6 more
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Ruby Crystals Grown by the Czochralski Technique

Japanese Journal of Applied Physics, 1966
Ruby crystals were grown by the Czochralski technique by using an induction-heated iridium crucible in various atmospheres. The crystals are grown along directions of the a- and c-axes and of 60° from the c-axis. The crystal on the whole is free from residual stresses, in contrast to the remarkable and irregular stresses usually found in crystals ...
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Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon

Materials Science in Semiconductor Processing, 2001
Abstract This work investigates the determination of oxygen precipitate density in silicon using non-destructive methods, based essentially on electrical and optical techniques. Regarding electrical techniques, minority carrier diffusion length measurements by means of surface photo voltage or electrolytical metal tracer methods to determine the ...
A. Bazzali, G. Borionetti, R. Falster, D. Gambaro, L. Mule’Stagno, M. Olmo, R. Orizio, M. Porrini   +7 more
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A novel technique for Czochralski growth of GaSb single crystals

Journal of Crystal Growth, 1993
Abstract A novel upper-lower crucible technique for synthesis and growth of GaSb crystals from scum-free melt has been developed. The key element of the technique is a special design acting as a sluice gate in the upper crucible to trap the scum on the melt surface after GaSb melt synthesis and homogenization. The remarkable feature of this method is
P.G. Mo, H.Z. Tan, L.X. Du, X.Q. Fan
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The Czochralski Technique

1993
If the crystal dimension (its radius) R and the crystallization front position relative to the melt-free surface h are regarded as variable parameters in the Czochralski technique, for stability study (1.3) will include (1.39) and (1.48): $$\delta \dot R = {A_{RR}}\delta R = {A_{Rh}}\delta h$$ (2.1) $$\delta \dot h = {A_{^{hR}}}\delta R +
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