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Czochralski Growth of Single Crystals Using High-Pressure Techniques
1984The rapid growth of device applications using the compound semiconductors, particularly, the arsenides and phosphides, has spurred the development of unique high-pressure methods for the growth of large single crystals of these volatile compounds. The production of single crystals using liquid-encapsulated Czochralski (LEC) crystal growth methods at ...
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Pseudo-dendritic growth in lead molybdate single crystal by Czochralski technique
Journal of Crystal Growth, 1994A pseudo-dendritic crystal growth of lead molybdate (PbMoO4) has been studied with the Czochralski technique. The observed dendritic growth is iso-directional, projecting from the circumference of the growth front, where the content of impurities, melt stoichiometry and temperature are expected to be varied.
Zeng, H.C. +4 more
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Crystal growth by a modified vapor pressure-controlled Czochralski (VCz) technique
Journal of Crystal Growth, 2008Abstract A modified vapor pressure-controlled Czochralski (VCz) method is reported which employs a diving bell around the growing crystal. Semi-insulating (SI) GaAs crystals with a diameter of 160 mm and an overall length up to 220 mm were grown from melts of up to 23 kg, and compared with similar-sized crystals grown using a standard liquid ...
M. Neubert +9 more
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Microtube-Czochralski technique (μT-CZ):
Journal of Crystal Growth, 1998K. Sankaranarayanan, P. Ramasamy
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Growth of Optical Grade Germanium (Ge) Single Crystals by Czochralski Technique
2019Antimony (Sb) doped Ge crystals are used in the form lenses, windows and prisms in various infrared sensors. Present paper describes the growth of optical grade Ge single crystals by Czochralski technique covering the growth process modification and optimization for growing crystals of different diameters, Sb doping and complete characterization.
Sudeep Verma +4 more
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Integrative oncology: Addressing the global challenges of cancer prevention and treatment
Ca-A Cancer Journal for Clinicians, 2022Jun J Mao,, Msce +2 more
exaly
Growing of Ga???In???-???Sb single crystals by Czochralski technique
2018The effective distribution coefficients for Ga in Ga???ln???-???Sb single crystals (?? ??? 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of Ga???ln???-???Sb single crystals using the Czochralski technique has been developed and the crystals up to 18 mm in diameter have
Kozhemyakin, G.N., Ruban, R.V.
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Czochralski crystal growth assisted by axial vibrational control technique
2009Avetissov, Igor +4 more
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