Results 51 to 60 of about 7,016 (252)

Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique

open access: yesCrystals, 2016
We describe a modified Bridgman growth technique to produce single crystals of the strongly correlated electron material URu2Si2 and its nonmagnetic analogue ThRu2Si2.
Andrew Gallagher   +5 more
doaj   +1 more source

Eco‐Efficient Processing and Refining Routes for Secondary Raw Materials from Silicon Ingot and Wafer Manufacturing

open access: yesAdvanced Energy and Sustainability Research, Volume 7, Issue 2, February 2026.
The ICARUS project developed pilot‐scale processes to recover and refine secondary raw materials from silicon photovoltaic (PV) ingot and wafer manufacturing waste. Silicon kerf, graphite, and silica residues are purified into high‐value inputs for the PV value chain and beyond.
Martin Bellmann   +18 more
wiley   +1 more source

Lithium tetraborate single crystals as a substrate for SAW devices

open access: yesArchives of Acoustics, 2014
Single crystals of lithium tetraborate (Li2B4O7) as a potential substrate for SAW devices have been investigated. Single crystals of lithium tetraborate have been grown according to the Czochralski technique.
J. FILIPIAK   +2 more
doaj  

On the effect of oxygen partial pressure on the chromium distribution coefficient in melt-grown ruby crystals

open access: yes, 2011
Small ruby crystals were grown by the Czochralski technique in different atmospheres and their actual chromium content was analysed by a wet chemical method.
Bertram, Rainer   +2 more
core   +1 more source

On‐Chip Perovskite Coolers

open access: yesAdvanced Materials Technologies, Volume 11, Issue 1, 8 January 2026.
Scaling of 3D‐integrated electronics exacerbates thermal bottlenecks, motivating solid‐state on‐chip cooling beyond convection and immersion. This perspective reviews optical refrigeration, electroluminescent cooling, and thermoelectrics for localized, vibration‐free heat removal.
Huilong Liu   +2 more
wiley   +1 more source

First‐Principles Investigation of the T‐ and M‐Centers in Silicon Using Meta‐GGA Functionals

open access: yesAdvanced Theory and Simulations, Volume 9, Issue 1, January 2026.
The relaxed structure for (a) T‐center and (b) M‐center. The calculations on the T‐center demonstrate excellent agreement with the HSE06, reinforcing the efficiency of meta‐GGA approaches for accurate defect characterization in Si. The M‐center is introduced, revealing promising quantum optical properties.
Petros‐Panagis Filippatos   +2 more
wiley   +1 more source

Flexible Crystals, Polymorph Selection and Interface Engineering for Organic Electronics: How New Discoveries and Established Knowledge Can Provide New Stimuli for Research Into Organic Semiconducting Single Crystals

open access: yesAdvanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
This work reviews recent advances in Organic Semiconducting Single Crystals (OSSCs), focusing on mechanical flexibility for robust devices, polymorph control for precise phase selection, and interface engineering with self‐assembled monolayers to improve alignment and performance.
Alessando Fraleoni‐Morgera   +3 more
wiley   +1 more source

Electricity from photovoltaic solar cells: Flat-Plate Solar Array Project final Report. Volume III: Silicon sheet: wafers and ribbons [PDF]

open access: yes, 1986
The Flat-Plate Solar Array (FSA) Project, funded by the U.S. Government and managed by the Jet Propulsion Laboratory, was formed in 1975 to develop the module/array technology needed to attain widespread terrestrial use of photovoltaics by 1985.
Briglio, A.   +3 more
core  

Heat exchanger method, ingot casting; fixed abrasive method, multi-wire slicing, phase 2. Silicon sheet growth development for the large area sheet task of the low cost silicon solar array project [PDF]

open access: yes, 1978
A crack-free silicon ingot has been cast in a graded, semiconductor purity silica crucible. More than 90% single crystallinity has been achieved in 2.5 kg cast ingots.
Khattak, C. P., Schmid, F.
core   +2 more sources

Optimization of High‐κ HfO2 Transistor Dielectrics by Atomic Layer Deposition as an Enabler of Novel Thin‐Film Circuits and Sensors

open access: yesAdvanced Physics Research, Volume 5, Issue 1, January 2026.
We explore the integration of atomic layer deposited (ALD) HfO2 dielectric films with solution‐processed In2O3 thin‐film transistors (TFTs) for a silicon chip‐free temperature sensor label. A voltage divider circuit is integrated with a supercapacitor power source, a thermal sensor, and an irreversible visual indicator (IVI), allowing for temperature ...
Matin Forouzmehr   +12 more
wiley   +1 more source

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