Results 101 to 110 of about 3,680,235 (308)

A Practical Noise2Noise Denoising Pipeline for High‐Throughput Raman Spectroscopy

open access: yesAdvanced Engineering Materials, EarlyView.
A lightweight and reproducible denoising pipeline for high‐throughput Raman spectroscopy is introduced, based on a 1D convolutional autoencoder trained with a Noise2Noise strategy. Using only repeated short‐exposure acquisitions, the method suppresses stochastic noise without reference spectra, enabling reliable spectral reconstruction while preserving
David Martin‐Calle   +5 more
wiley   +1 more source

Influence of Scan Strategies in Electron Beam Powder Bed Fusion on Solidification, Microstructure, and High‐Temperature Compressive Properties of γ′‐Strengthened Inconel 738LC

open access: yesAdvanced Engineering Materials, EarlyView.
Experiments and thermophysical simulations were conducted to investigate the electron beam powder bed fusion electron beam (PBF‐EB/M) process for the γ′‐strengthened nickel‐based superalloy Inconel 738LC. The results demonstrate the impact of process‐induced microstructural variations on high‐temperature mechanical behavior, providing a basis for ...
Jan Niklas Petenati   +11 more
wiley   +1 more source

Dehazing algorithm using adaptive dark channel fusion and sky compensation

open access: yesJournal of Measurement Science and Instrumentation, 2021
Aiming at the inaccurate transmission estimation problem of dark channel prior image dehazing algorithm in the sudden change area of depth of field and sky area, a dehazing algorithm using adaptive dark channel fusion and sky compensation is proposed ...
LU Xinxuan, YANG Yan
doaj  

Uniform Amorphization of Crystalline Silicon Surfaces Enabled by Deep Ultraviolet Femtosecond Laser Pulses

open access: yesAdvanced Engineering Materials, EarlyView.
Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali   +5 more
wiley   +1 more source

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

open access: yesAdvanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero   +12 more
wiley   +1 more source

Image Mosaic Based on Local Guidance and Dark Channel Prior

open access: yesImage Analysis and Stereology
Image mosaic is of significance in various areas such as object tracking and drone reconnaissance. Aiming at the problems of poor performance and high rate of false match in foggy images, an improved stitching method based on local guided KAZE and dark ...
Chong Zhang   +3 more
doaj   +1 more source

Non-Uniform Low-Light Face Image Enhancement Based on Dark Channel Prior and Image Uniform Posterior

open access: yesIEEE Access
Non-uniform low-light images, characterized by complex lighting conditions, pose a significant challenge in image restoration and enhancement, particularly under backlit scenarios where the high-brightness background obscures the foreground information ...
Bo-Yang Zhang   +2 more
semanticscholar   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

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