Results 181 to 190 of about 150,778 (266)

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

Data Protection, Privacy and Information Law: A Practical Guide

open access: yesSCRIPTed: A Journal of Law, Technology & Society
Daniela Bincheva
doaj   +1 more source

Surface Energy Modulated Self‐Assembly of Percolative Gallium Nanodroplet Films for Stretchable Electronics

open access: yesAdvanced Electronic Materials, EarlyView.
Surface‐energy guided self‐assembly of liquid metals enables the transformation of liquid metal micro/nanodroplets into continuous perocolative films on elastomeric substrates. By tailoring interfacial energetics and wetting behavior, uniform, conductive, and stretchable films are achieved, offering scalable pathways for high‐performance soft ...
Alwar Samy Ramasamy   +7 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

Beyond the 72 h window: operationalizing safe abortion as essential care for sexual violence survivors in humanitarian settings. [PDF]

open access: yesFront Reprod Health
Mambo SB   +6 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

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