Results 211 to 220 of about 121,204 (311)

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

Advanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis, Anastasia Soultati, Leonidas C. Palilis, Ermioni Polydorou, Konstantinos Davazoglou, Petros‐Panagis Filippatos, Goutham Raj Perumallapelli, Ravindra Naik Bukke, Abd. Rashid bin Mohd Yusoff, Ilhwan Ryu, Peng Gao, Alexander Chroneos, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou   +13 more
wiley   +1 more source

Dynamic power management based on Model Predictive Control and PSO for hybrid microgrid. [PDF]

Sci Rep
Veni SV, Jayachandran J, Malathi S, Prakash RA, Jayavignesh J, Prabaharan N.   +5 more
europepmc   +1 more source

Harmonic Control of Three-Phase AC/DC Converter With Time-Domain Guarantees

Maxime Grosso, Pierre Riedinger, Jamal Daafouz, Serge Pierfederici, H. Idrissi, Blaise Lapôtre   +5 more
openalex   +2 more sources

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

Advanced Electronic Materials, EarlyView.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim, Sung Yun Woo, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo   +4 more
wiley   +1 more source

Fault Ride-Through Optimization Scheme for Hybrid AC/DC Transmission Systems on the Same Tower. [PDF]

Sensors (Basel)
Chu X, Liu Q, Fu L, Yu S, Wang W.
europepmc   +1 more source

Precise Tailoring of Charge Transport Characteristics in Zr and Hf Doped Indium Tin Oxide Thin Film Transistors

Advanced Electronic Materials, EarlyView.
Zirconium, hafnium, and mixed zirconium/hafnium doped indium tin oxide thin films are accessible by atomic layer deposition. The amorphous functional films are about 8 nm thick and show a high interdiffusion of all elements. Their transistor characteristics can be modulated depending on the amount of Zr and Hf oxide phases incorporated in these thin ...
Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann‐Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider   +5 more
wiley   +1 more source

Improved one-dimensional residual network high-voltage DC diagnosis for high-precision fault identification. [PDF]

PLoS One
Li R, Zhang X, Hao W, Wang T.
europepmc   +1 more source

Liquid Metal Elastomer Based Coplanar Waveguide Transmission Line for Stretchable and Self‐Healing RF Electronics

Advanced Electronic Materials, EarlyView.
This work shows the first proof‐of‐concept for fully self‐healing and stretchable coplanar waveguide (CPW) transmission line using printable electrically conductive liquid metal elastomer. RF performance was evaluated in frequency ranging from 1 to 6 GHz under uniaxial tensile strain up to 100%, after self‐healing, and for 1000 cyclic stretch‐release ...
Ahmed Albeltagi, Tiia Tyystälä, Mikko Nelo, Heli Jantunen, Jari Juuti, Jarkko Tolvanen, Jari Hannu   +6 more
wiley   +1 more source

Performance evaluation of a series-connected step-up/down partial power converter for battery energy storage applications. [PDF]

Sci Rep
Liu Q, Jing L, Xu W, Sun R, Wu X, Lei J, Zhang Y.   +6 more
europepmc   +1 more source

Interface‐Engineered TiO2 Interlayer for Reliable Hafnia‐Based MFMIS FeFETs

Advanced Electronic Materials, EarlyView.
An ultrathin TiO2 interlayer suppresses oxygen‐vacancy formation in HZO‐based MFMIS FeFETs, enabling enlarged memory windows and reduced leakage current with improved switching characteristics. ABSTRACT We investigated a TiO2‐engineered interfacial strategy to enhance the stability and reliability of hafnia‐based ferroelectric field‐effect transistors (
Changhyeon Han, Been Kwak, Hyun‐Min Kim, Dahye Yu, Daewoong Kwon   +4 more
wiley   +1 more source