Results 161 to 170 of about 5,902,785 (262)

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

open access: yesAdvanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe   +11 more
wiley   +1 more source

Design and Simulation of a Novel Modular Converter-Transformer for AC/DC, DC/AC and DC/DC Operations

open access: yes
This manuscript describes the research and the development of a novel family of modular AC/DC, DC/AC and DC/DC converters for high-voltage interconnections between AC and DC lines or between two DC lines. Such devices are bidirectional and they integrate
Matteo Benvenuti   +13 more
core   +1 more source

Al1−xHfxN$\text{Al$_{1-x}$Hf$_{x}$N}$ Thin Films with Enhanced Piezoelectric Responses for GHz Surface Acoustic Wave Devices

open access: yesAdvanced Electronic Materials, EarlyView.
Reactively sputtered wurtzite Al1‐xHfxN thin films, exhibiting strong c‐axis texture and enhanced piezoelectric response, are demonstrated as a cost‐effective alternative to Al1‐xScxN. X‐ray absorption spectroscopy reveals that cross‐gap N 2p–Hf 5d hybridization increases the Born effective charge and enables a multifold increase in piezoelectric ...
Laura I. Wagner   +14 more
wiley   +1 more source

Thermally Coupled NTC Chip Thermistors: Their Properties and Applications. [PDF]

open access: yesSensors (Basel)
Bodić MZ   +4 more
europepmc   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

open access: yesAdvanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen   +9 more
wiley   +1 more source

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