Results 91 to 100 of about 477,540 (265)

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Tuning Mechanoreceptor Signaling Enhances the Adjuvant Effect of Biomaterial Vaccines

Advanced Functional Materials, EarlyView.
Matrix stiffness serves as an independent immunological signal in biomaterial vaccines. Stiffer microporous hydrogel vaccines enhance dendritic cell maturation and migration to draining lymph nodes, promote T follicular helper cell expansion through Yap/Taz signaling, and increase antigen‐specific antibody production.
Lily Shang, Daniel P. Mayer, Prabhat K. Purbey, Yingzi Liu, Kindra Kelly‐Scumpia, Clara Kang, Natalie Tsubamoto, Dhriti Bolangadi, Iqra Arshad, Charisse Ng, Maksim V. Plikus, Dino Di Carlo, Jason S. Weinstein, Philip O. Scumpia   +13 more
wiley   +1 more source

Polarization Sensitivity of Chiral Manganese Halide Scintillators Enables High‐Resolution X‐Ray Imaging

Advanced Functional Materials, EarlyView.
Highly luminescent chiral manganese halide crystals are synthesized using chiral ligands, and they exhibit dissymmetry factors up to 1.4 × 10−2 and show X‐ray detection scintillation capability with a light yield of 43 380 photons/MeV and a low detection limit of 0.05198 µGyair·s−1.
Yue Han, Jun'an Lai, Peng He, Wenxia Zhang, Xirong Ke, Shengsi Liu, Kang An, Xiao‐Fang Jiang, Lakshminarayana Polavarapu, Xiaosheng Tang   +9 more
wiley   +1 more source

Thermally Robust Spin–Orbit Torque Switching in Low‐Resistivity Mo‐Alloyed β‐W Heterostructures

Advanced Functional Materials, EarlyView.
Mo‐alloyed β‐W heterostructures exhibit enhanced spin‐orbit torque efficiency, reduced resistivity and switching current density, and reliable operation from −50 to +150°C. The optimized W87.3Mo12.7 device achieves high spin Hall conductivity with thermal robustness, highlighting its potential for energy‐efficient magnetic memory and automotive ...
Han Seok Ko, Hyun Ju Lee, Jeong Kyu Lee, Han Sol Kim, Min Seok Kim, Quynh Anh T. Nguyen, Sonny H. Rhim, Young Keun Kim   +7 more
wiley   +1 more source

Research on Control Strategy of Photovoltaic Generation in DC Microgrid Based on Three-phase Interleaved DC/DC Converter

Kongzhi Yu Xinxi Jishu, 2014
Based on an independent photovoltaic generation system in DC microgrid with batteries, a three-phase interleaved DC/DC converter was used as the interface converter.
ZHANG Weiwei, TONG Yibin, YANG Jie, YANG Tao   +3 more
doaj  

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Small signal analysis of DC voltage control based on a virtual resistance of DC/DC converter integrated in a multiterminal DC grid

IET Generation, Transmission & Distribution
The future multi‐terminal direct‐current (MTDC) grid will require the interconnection of point‐to‐point high‐voltage (HV) DC links with different specifications such as DC voltage level, system grounding configuration and HVDC technology.
Ghazala Shafique, Johan Boukhenfouf, François Gruson, Shabab Samimi, Frédéric Colas, Xavier Guillaud   +5 more
doaj   +1 more source

Overview of Dual-Active-Bridge Isolated Bidirectional DC–DC Converter for High-Frequency-Link Power-Conversion System

IEEE transactions on power electronics, 2014
Biao Zhao, Q. Song, Wenhua Liu, Yandong Sun   +3 more
semanticscholar   +1 more source