Results 181 to 190 of about 319,280 (338)

Interlayer Dzyaloshinskii–Moriya Interaction in Synthetic Ferrimagnets for Spiking Neural Networks

open access: yesAdvanced Science, EarlyView.
This work introduces a groundbreaking integration of asymmetric magnetic structures (synthetic ferrimagnets) and antisymmetric magnetic interaction (interlayer Dzyaloshinskii–Moriya interaction) for the first time. It addresses the critical challenge of IL‐DMI detection and shows the discovery of unprecedented analog‐like spin‐orbit torque switching ...
Shen Li   +14 more
wiley   +1 more source

Smart Solutions: A New Direct Current Electric Machine Design to Reduce Weight and Enhance Efficiency. [PDF]

open access: yesGlob Chall
Ivliev D   +5 more
europepmc   +1 more source

Defect Dynamics and Solution‐Processed Interconnects in Perovskite‐Organic Tandem Solar Cells

open access: yesAdvanced Science, EarlyView.
In this study, we identify the underlying cause of efficiency losses in WBG perovskites, which is ascribed to the presence of mobile defects distributed at surface regions. We further employ effective passivation agent with functional chemical groups to facilitate the healing of the mobile defects, thereby enhancing the VOC to 1.35 V and champion ...
Yingjie Hu   +12 more
wiley   +1 more source

A Soft, Flexible Implant for Wireless Photothermal–Pyroelectric Neurostimulation

open access: yesAdvanced Science, EarlyView.
A replication strategy is used to enlarge the exposed surface area of barium titanate within flexible films with embedded carbon nanotubes, enabling efficient photothermal‐pyroelectric stimulation. Polar crystalline nanosheets show superior performance in guiding neural progenitor cells toward neuronal differentiation.
Jiang Wu   +7 more
wiley   +1 more source

Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications

open access: yesAdvanced Science, EarlyView.
The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim   +5 more
wiley   +1 more source

Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors

open access: yesAdvanced Science, EarlyView.
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo   +16 more
wiley   +1 more source

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