Results 211 to 220 of about 2,265,840 (284)

Opposite Trap‐State Evolution Pathways Govern Endurance and Retention Failure in Amorphous Chalcogenide Memory

open access: yesAdvanced Science, EarlyView.
GeSbSe selector‐only memory devices are investigated through physical and electrical analyses to reveal opposite trap‐state evolution pathways governing reliability degradation. Endurance cycling drives Se migration, transitioning traps from deep to shallow states.
Byung Jun Lee   +3 more
wiley   +1 more source

Unraveling the Effects of Depolarization in Ultrathin Barium Titanate

open access: yesAdvanced Science, EarlyView.
This article employs synchrotron‐based spectroscopy, time‐resolved electrical measurements, and phase‐field simulations to establish reverse‐domain formation as the mechanism of polarization loss in ultrathin BaTiO3${\rm BaTiO}_3$ films as a critical obstacle to low‐voltage ferroelectric devices.
Thomas Lee   +6 more
wiley   +1 more source

Hardware Acceleration of Stochastic Neural Networks Enabled by Bit‐Cell Level Co‐Design of Magnetic Tunnel Junctions

open access: yesAdvanced Science, EarlyView.
An MTJ‐based probabilistic processing‐in‐memory architecture unites nonvolatile storage, local entropy generation, and stochastic computation within each memory cell. Stored multi‐bit weights are converted directly into programmable stochastic bitstreams, enabling neural‐network inference, adaptive Ising optimization, and uncertainty‐aware Bayesian ...
Qiuyuan Wang   +6 more
wiley   +1 more source

Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors

open access: yesAdvanced Science, EarlyView.
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer   +19 more
wiley   +1 more source

Interfacial Asymmetry and Surface Roughness Enhanced Topological‐Hall‐Like Transport in SRO/BTO/SRO Trilayers

open access: yesAdvanced Science, EarlyView.
Trilayer oxide architecture introduces interfacial asymmetry and surface roughness in SRO/BTO/SRO heterostructures, creating a locally modulated polar and magnetic landscape. This design enhances the topological‐Hall‐like response, achieving a broad 5–90 K stability window and a maximum ρTHE of 0.8 µΩ cm, demonstrating an effective route to amplify ...
Sagar E. Shirsath   +11 more
wiley   +1 more source

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