Results 101 to 110 of about 11,340 (302)

Strain‐Adaptive Dielectric Metamaterials via Bioinspired “Ligament‐Bone” Architecture for Ultrahigh‐Energy Capacitive Storage

open access: yesAdvanced Science, EarlyView.
A bioinspired strain‐adaptive ligament‐bone architecture achieves record‐high energy density of 26.1 J cm−3 and 90% efficiency at 600 MV m−1, coupled with a Young's modulus of 2.13 GPa. ABSTRACT Polymer dielectrics for capacitive energy storage face fundamental trade‐offs between breakdown strength, energy density, efficiency, and mechanical robustness.
Jian Wang   +6 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song   +10 more
wiley   +1 more source

Study on the Aggregation Structure and DC Conductivity and Breakdown Characteristics of Polypropylene Insulation for HVDC Cables

open access: yesHigh Voltage
This paper investigates elastomer‐toughened polypropylene (PP) insulation to meet the application requirements for green noncrosslinked PP cables in high‐voltage direct current (HVDC) transmission.
Kexin Chen   +7 more
doaj   +1 more source

Effect of Barium Titanate (BaTiO3) Additive on the Short-Term DC Breakdown strength of Polyethylene.

open access: yes, 1996
The use of additives to insulting materials is one of the methods to improve certain properties of these materials. Additives can also be used to provide more insight into some processes like conduction, space charge formation and breakdown under certain
Henk, Peter O
core  

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

DC ramp rate effect on the breakdown response of SiO2-BOPP nanocomposites

open access: yes, 2015
The effect of voltage ramp rate on the short-term dielectric breakdown strength of polymer nanocomposites is not well-documented. In this paper, the effect of DC field ramp rate on the large-area breakdown performance of melt-extruded bi-axially oriented
Karttunen, Mikko   +3 more
core   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol   +7 more
wiley   +1 more source

Space Charge and Breakdown Properties of PP‐Based Insulation Interface in Extrusion Molded Joint for HVDC Submarine Cables

open access: yesHigh Voltage
This paper focuses on the space charge and breakdown characteristics of polypropylene (PP)‐based insulation interface in extrusion moulded joint (EMJ) for high‐voltage direct current (HVDC) submarine cables.
Zhonglei Li   +5 more
doaj   +1 more source

Carrier Transport and Molecular Displacement Modulated dc Electrical Breakdown of Polypropylene Nanocomposites

open access: yes, 2018
Dielectric energy storage capacitors have advantages such as ultra-high power density, extremely fast charge and discharge speed, long service lifespan and are significant for pulsed power system, smart power grid, and power electronics.
Yin Huang   +7 more
core   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

Home - About - Disclaimer - Privacy