Results 51 to 60 of about 14,560 (278)

Magnetic Force Microscopy Signatures of Higher‐Order Skyrmions and Antiskyrmions

Advanced Functional Materials, EarlyView.
Magnetic force microscopy operated under vacuum conditions enables the qualitative identification of higher‐order skyrmions and antiskyrmions in Co/Ni multilayers at room temperature. Distinct stray‐field contrast signatures arise from vertical Bloch lines and complex domain‐wall configurations.
Sabri Koraltan, Joe Sunny, Tamer Karaman, Reshma Peremadathil‐Pradeep, Emily Darwin, Felix Büttner, Dieter Suess, Hans Josef Hug, Manfred Albrecht   +8 more
wiley   +1 more source

Interaction induced magnetic field asymmetry of nonlinear mesoscopic electrical transport

, 2005
We demonstrate that the nonlinear I-V characteristics of a two probe conductor is not an even function of magnetic field. While the conductance of a two-probe conductor is even in magnetic field, we find that already the contributions to the current ...
Agrait, Al'tshuler, Aleiner, Baranger, Baranger, Beenakker, Brouwer, Brouwer, Brouwer, Brouwer, Büttiker, Büttiker, Büttiker, Büttiker, Büttiker, Casimir, Chen, Chen, Christen, Christen, de Haan, DiCarlo, Ford, Gopar, Hackens, Jalabert, Kim, Kirczenow, Linke, Löfgren, Martin, Moskalets, Onsager, Polianski, Pomorski, Rikken, Shorubalko, Shutenko, Sommerfeld, Song, Spivak, Sánchez, Sánchez, Taboryski, Vavilov, Wang, Webb, Wei, Xue, Zumbühl   +49 more
core   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Shuttle electrical environment [PDF]

, 1985
Part of an AFGL payload flown on the STS-4 mission consisted of experiments to measure in-situ electric fields, electron densities, and vehicle charging.
Anderson, P. B., Girouard, D., Smiddy, M., Sullivan, W. P.   +3 more
core   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Capacity Allocation Method of Key Equipment in PV System Applied in Office Buildings

Zhongguo dianli
With the goal of carbon peak and carbon neutrality, the photovoltaics, energy storage, direct current, and flexibility (PEDF) system applied in buildings is developing rapidly. The photovoltaic output in urban office buildings is generally lower than the
Lei ZHANG, Weidong XIAO, Chunbing JIANG, Yao LIU, Shaojie LI, Ji ZHANG   +5 more
doaj   +1 more source

Regiorandom Polythiophenes for Fully Stretchable Electrochemical Transistors and Logic Circuits

Advanced Functional Materials, EarlyView.
Regiorandom (RRa) polythiophenes, once regarded as unsuitable for electronics, exhibit exceptional switching performance via volumetric electrochemical doping. Optimized RRa‐based organic electrochemical transistors (OECTs) achieve a high on/off ratio (≈104), stable operation under 200% strain, and enable fully stretchable logic gates, demonstrating ...
Dong Hyun Park, Min Su Kim, Kyu Yeon Kim, Jae Hyun Han, Moon Sung Kang, Kyung Gook Cho, Keun Hyung Lee   +6 more
wiley   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Temperature‐Modulated Threshold Response in a Volatile Memristor: Toward a Biomimetic Polymodal Nociceptive System

Advanced Functional Materials, EarlyView.
This study demonstrates an artificial polymodal nociceptor whose firing threshold is actively modulated by temperature. A volatile TiN/TiOx/ZnO/TiOx/ITO memristor shows interfacial ion–driven resistive switching and membrane‐potential‐like dynamics, enabling temperature‐dependent nociceptive behavior.
Chanmin Hwang, Yuseong Jang, Myoungsu Chae, Hee‐Dong Kim   +3 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source