Results 141 to 150 of about 1,916 (295)

Unconventional Hysteretic Charge Filling in Moiré‐Reconstructed Helical Trilayer Graphene

open access: yesAdvanced Science, EarlyView.
In helical trilayer graphene, sequential twisting reconstructs the moiré landscape into periodic domains separated by aperiodic boundaries. Longitudinal transport reveals sweep‐direction‐dependent hysteresis, while the Hall response traces this behavior to hysteretic charge filling at the aperiodic boundaries.
Hangyeol Park   +9 more
wiley   +1 more source

An Improved DC Circuit Breaker Topology Capable of Efficient Current Breaking and Regeneration

open access: yes, 2022
An Improved DC Circuit Breaker Topology Capable of Efficient Current Breaking and ...
SMS Lumen (15767297)   +3 more
core  

Dynamically Modified Flexible Zn Powder Anodes with Stable Performance at High Rate and High Zn Utilization

open access: yesAdvanced Science, EarlyView.
A dynamically shape‐variant liquid metal‐based network is integrated into Zn powder electrode, where intrinsic fluidity and structural adaptability of the liquid metal‐based network enable effective mitigation of dendritic growth, alleviation of stress accumulation, and prevention of Zn loss during Zn plating‐stripping processes.
Yuxuan Wang   +9 more
wiley   +1 more source

3D‐Printed Magnetoelectronics for Interactive Appliances and Self‐Aware 4D‐Printed Mechatronics

open access: yesAdvanced Science, EarlyView.
3D‐printed magnetoelectronics integrate high‐performance magnetic field sensing directly into complex structural components. Flexible spring and cross‐shaped sensors exhibit giant magnetoimpedance and 3D Hall sensing for vector field reconstruction. Applications include smart‐home switches, robotic joysticks, volumetric magnetometers, and self‐aware 4D‐
Eduardo Sergio Oliveros‐Mata   +5 more
wiley   +1 more source

Cryogenic DC Circuit Breaker Based on High‐Power Press‐Pack IGBT

open access: yesIET Electric Power Applications
The application of cryogenic and superconducting technologies could revolutionise aircraft electric propulsion systems by substantially increasing their power density and energy efficiency.
Zhongying Wang   +9 more
doaj   +1 more source

Colossal Photovoltaic Current in Ferroelectric Oxide by Constructing Defect Band

open access: yesAdvanced Science, EarlyView.
Colossal photovoltaic current density of 34.36 mA/cm2 under 375 nm illumination has been achieved in the Pb‐deficient PbTiO3 film. The ultraviolet photoresponsivity surpasses that of all reported ferroelectric materials. This enhancement is attributed to the junction effect between the Pb‐deficient and non‐defective layers.
Yiran Sun   +16 more
wiley   +1 more source

Multiferroic‐Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations

open access: yesAdvanced Science, EarlyView.
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su   +13 more
wiley   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

Array‐Level Characterization of Cryogenic RRAM

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu   +7 more
wiley   +1 more source

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