Results 141 to 150 of about 1,725,458 (295)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Flier for Girls Rock! DC concert at 9:30 Club, August 14, 2010

open access: yes, 2010
Flier for Girls Rock! DC showcase at 9:30 Club on August 14, 2010. Flier features a drawing of a four-track recorder and headphones and the Girls Rock!
Girls Rock! DC Dougherty, Bobbie Girls Rock! DC (donor) (performers and organizations)et al
core  

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Auto-Regression Model-Based Off-Line PID Controller Tuning: An Adaptive Strategy for DC Motor Control. [PDF]

open access: yesMicromachines (Basel), 2022
Niembro-Ceceña JA   +4 more
europepmc   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Development of New Structure of Blushless DC Servo Motor for Ceiling Fan [PDF]

open access: yes, 2012
[[abstract]]This paper proposes the improvements of the new structure of a blushless DC servo motor (BLDCM) for the ceiling fan. The new type ceiling fan is first designed by using the blushless DC servo motor theory and the six-step wave form for the ...
劉傳聖; 黃仲欽; 陳良瑞; 黃鐘慶; 李秉澤; 曾昭雄; 陳鍾榮; 傅智誠
core  

Metaheuristics-Based Optimization of a Robust GAPID Adaptive Control Applied to a DC Motor-Driven Rotating Beam with Variable Load. [PDF]

open access: yesSensors (Basel), 2022
Borges FG   +7 more
europepmc   +1 more source

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

open access: yesAdvanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li   +11 more
wiley   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

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