Results 141 to 150 of about 69,144 (263)

Mimicking Silent Synapse Recruitment: A SiOx/Cu‐Pancake Memristive Device For Analog Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Electroforming‐free TiN/SiOx/Cu/SiOx/TiN memristive devices exploit pancake‐like Cu nanoparticles embedded in a SiOx double layer to create a heterogeneous Schottky‐barrier landscape. Under bias, oxygen‐vacancy redistribution progressively lowers local barriers and recruits initially inactive Cu‐PC pathways into a parallel conduction ensemble, enabling
Rouven Lamprecht   +10 more
wiley   +1 more source

Enhanced Tantalum Superconducting Resonator Performance via All‐Surface Organic Monolayer Passivation

open access: yesAdvanced Functional Materials, EarlyView.
The internal quality factor of tantalum superconducting resonators is significantly increased by ∼140% in the low photon regime by passivating their surfaces with a high‐quality alkene self‐assembled monolayer. Our methodology promises to enhance the performance of superconducting quantum circuits.
Harsh Gupta   +6 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

open access: yesAdvanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen   +5 more
wiley   +1 more source

Thermally Robust Spin–Orbit Torque Switching in Low‐Resistivity Mo‐Alloyed β‐W Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Mo‐alloyed β‐W heterostructures exhibit enhanced spin‐orbit torque efficiency, reduced resistivity and switching current density, and reliable operation from −50 to +150°C. The optimized W87.3Mo12.7 device achieves high spin Hall conductivity with thermal robustness, highlighting its potential for energy‐efficient magnetic memory and automotive ...
Han Seok Ko   +7 more
wiley   +1 more source

High precision experimentally validated adaptive neuro fuzzy inference system controller for DC motor drive system. [PDF]

open access: yesSci Rep
Bhayo MA   +6 more
europepmc   +1 more source

Interface‐Defect Synergy Engineering of Amorphous Ga2O3 for Voltage‐Tunable Dual‐Mode Optoelectronic Devices: Self‐Powered Imaging and Neuromorphic Vision

open access: yesAdvanced Functional Materials, EarlyView.
An interface‐defect co‐engineered strategy enables bias‐programmable integration of self‐powered photodetection and low‐power synaptic functionalities within a single‐material amorphous Ga2O3 device. This design achieves reversible switching via voltage modulation, supporting high‐contrast imaging and visual memory, and demonstrates a neuromorphic ...
Wanjun Li   +13 more
wiley   +1 more source

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