Results 71 to 80 of about 37,496 (307)

IQ Imbalance Estimation Scheme in the Presence of DC Offset and Frequency Offset in the Frequency Domain

open access: yesIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, 2009
Direct conversion receivers in orthogonal frequency division multiplexing (OFDM) systems suffer from direct current (DC) offset, frequency offset, and IQ imbalance. We have proposed an IQ imbalance estimation scheme in the presence of DC offset and frequency offset, which uses preamble signals in the time domain.
Mamiko Inamori   +2 more
openaire   +1 more source

Inflammation Unchecked: Concurrent Kawasaki Disease and Stevens‐Johnson Syndrome in an 18‐Month‐Old Child

open access: yes
Arthritis Care &Research, EarlyView.
Catherine Deffendall   +6 more
wiley   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

open access: yesAdvanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite   +5 more
wiley   +1 more source

A NEW DIAGNOSTIC METHOD OF FAULTY TRANSISTOR IN A THREE-PHASE INVERTER

open access: yesElectrica, 2006
This paper describes a method of detection and identification of transistor base drive open-circuit fault of 3-phase voltage source inverter (VSI), feeding an open loop controlled induction motor.
Benslimane TARAK, Chetate BOUKHMIS
doaj  

A review on power reducing methods of neural recording amplifiers [PDF]

open access: yesJournal of Intelligent Procedures in Electrical Technology, 2016
Implantable multi-channel neural recording Microsystems comprise a large number of neural amplifiers, that can affect the overall power consumption and chip area of the analog part of the system.power, noise, size and dc offset are the main challenge ...
samira mehdipour, mehdi habibi
doaj  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

A direct-conversion mixer with a DC-offset cancellation for WLAN

open access: yes, 2007
This paper presents a 5GHz double-balanced mixer with DC-offset cancellation circuit for direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard.
Xu, Q, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.   +6 more
core  

Low-pass filtering or gain tuning free simple DC offset rejection technique for single and three-phase systems [PDF]

open access: yes, 2020
This paper aims to address the DC offset rejection problem in grid synchronization algorithm. A simple approach to estimate the unknown grid frequency in the presence of DC offset is proposed for this purpose. Some of the existing techniques available in
Biricik, Samet   +2 more
core   +1 more source

LED Driver Design for Indoor Lighting and Low- rate Data Transmission Purpose

open access: yesEAI Endorsed Transactions on Energy Web, 2017
— The LED driver design for lighting at the indoor environment, as well as data transmitter with a one-way link (for download purpose), is discussed clearly in this paper.
Trio Adiono, Syifaul Fuada
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

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