Results 221 to 230 of about 108,307 (312)

Enhancing Stability of Few‐Layer Black Phosphorus (FLBP) Through Nitrocellulose Coating: A Robust Defense Mechanism Against Degradation

open access: yesAdvanced Materials Interfaces, EarlyView.
In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk   +8 more
wiley   +1 more source

Direct Mode‐Resolved Measurement of Interfacial Phonon Transport by Acoustic Phonon Reflectometry

open access: yesAdvanced Materials Interfaces, EarlyView.
We introduce a novel analysis, acoustic phonon reflectometry, that measures the mode‐resolved phonon reflection coefficient at semiconductor interfaces. In aluminum nitride, we observe excellent agreement with the acoustic mismatch model across three distinct interfaces.
Christopher Hennighausen   +9 more
wiley   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

open access: yesAdvanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

open access: yesAdvanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales   +10 more
wiley   +1 more source

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