Results 191 to 200 of about 178,509 (285)

A Soft Mechanoluminescent Skin for High‐Resolution Optical Tactile Sensing in Human–Machine Interaction

open access: yesAdvanced Science, EarlyView.
A soft mechanoluminescent tactile sensor that converts force directly into light is presented, enabling imaging‐based, wiring‐free touch sensing. By integrating a flexible ML‐skin with CMOS readout, the system achieves high sensitivity, fast response, and high spatial resolution, while maintaining structural simplicity and energy efficiency, offering a
Yu Feng   +11 more
wiley   +1 more source

Natural Resistance to Ovarian Hyperstimulation Syndrome in Estrildid Finches Reveals Macrophage GPR183 as a Potential Therapeutic Target

open access: yesAdvanced Science, EarlyView.
Ovarian macrophage depletion reverses OHSS resistance in estrildid finches and exacerbates OHSS symptoms in rats. Activating macrophage GPR183 alleviates OHSS by reducing pro‐inflammatory factors, increasing immunomodulatory molecules, remodeling CD44/SDC4‐mediated communication, and restoring immune homeostasis.
Xiaofei Yan   +11 more
wiley   +1 more source

Enhanced High Dimensionality and the Information Processing Capacity in Interfered Spin Wave‐Based Reservoir Computing, Achieved With Eight Detectors

open access: yesAdvanced Electronic Materials, EarlyView.
Physical reservoir computing (PRC) based on spin wave interference has demonstrated high computational performance, yet room for improvement remains. In this study, we fabricated this concept PRC with eight detectors and evaluated the impact of the number of detectors using a chaotic time series prediction task.
Sota Hikasa   +6 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar   +9 more
wiley   +1 more source

Array‐Level Characterization of Cryogenic RRAM

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu   +7 more
wiley   +1 more source

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