Results 111 to 120 of about 45,835 (296)
, 2007 The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages ...
E. F. Schubert +10 more
core +1 more source
Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory
Advanced Science, EarlyView.Schematic and key features of the proposed forward‐forward physical unclonable neural network (FF‐PUNN), incorporating a concealable physical unclonable function (PUF) layer and forward‐forward (FF) learning. ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and ...
Sung‐Ho Park +8 more
wiley +1 more source
Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy
, 2017 N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with a high on/off
Cho, YongJin +4 more
core +1 more source
Advanced Science, EarlyView.2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal +3 more
wiley +1 more source
Primary thermometry triad at 6 mK in mesoscopic circuits
, 2016 Quantum physics emerge and develop as temperature is reduced. Although mesoscopic electrical circuits constitute an outstanding platform to explore quantum behavior, the challenge in cooling the electrons impedes their potential.
Anthore, A. +8 more
core +3 more sources
Advanced Electronic Materials, EarlyView.A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta +9 more
wiley +1 more source
Applied SciencesThis study focuses on monitoring the deformation of the shallow unsymmetrical section of a super-large-span tunnel portal relying on the newly built Shimentangshan Tunnel, and through numerical simulations, the construction sequence and drift ratios were
Li Wan +5 more
doaj +1 more source
Environmental Stability and Electronic Properties of Individual Flakes of Ti2CTx MXene
Advanced Electronic Materials, EarlyView.The paper presents a synthesis of large Ti2CTx MXene flakes with sizes reaching 40 µm and examines their environmental stability and electronic behavior. It demonstrates that monolayer flakes degrade rapidly in ambient conditions, leading to semiconducting‐like behavior with low conductivity and mobility. In contrast, multilayer flakes exhibit enhanced
Md. Ibrahim Kholil +5 more
wiley +1 more source
Advances in Materials Science and Engineering, 2017 Mud and water often gush suddenly during the construction process of deep buried karst tunnels, which may cause serious accidents and result in major economic losses.
Hai Shi, Mingzhou Bai, Shaochuan Xing
doaj +1 more source
Organic Thin‐Film Transistors for Neuromorphic Computing
Advanced Electronic Materials, EarlyView.Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source