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Deep Ultraviolet Light Emitting Diodes
2006 IEEE LEOS Annual Meeting Conference Proceedings, 2006In this paper, light-emitting devices based on III-nitride semiconductors offer many advantages including miniaturization, reliability, reduced costs, low power consumption, and ultimately a choice of wavelength of operation between 365 and 200 nm is ...
X. Hu +9 more
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Cascaded deep ultraviolet light-emitting diode via tunnel junction
Chinese Optics Letters, 2021The AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) is an alternative DUV light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power, which seriously hinder their commercialization.
Huabin Yu +10 more
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Deep-Ultraviolet Light-Emitting Diodes
IEEE Transactions on Electron Devices, 2010Compact solid-state deep-ultraviolet (DUV) light-emitting diodes (LEDs) go far beyond replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new applications for air, water, and surface sterilization and decontamination, bioagent detection and identification, UV curing, and biomedical and analytical instrumentation.
Michael S. Shur, Remis Gaska
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Monolayer GaN excitonic deep ultraviolet light emitting diodes
Applied Physics Letters, 2020We report on the molecular beam epitaxy and characterization of monolayer GaN embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 eV is measured by varying the AlN barrier thickness. Detailed optical measurements and direct correlation with first-principles calculations based on density functional and many-body ...
Y. Wu +9 more
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AlGaN Deep-Ultraviolet Light-Emitting Diodes
Japanese Journal of Applied Physics, 2005We report on the development of AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs) grown by migration-enhanced metalorganic chemical vapor deposition (MEMOCVD). Improved quality of AlGaN has allowed us to achieve milliwatt-power at wavelengths ranging from 365 to 265 nm.
Jianping Zhang +8 more
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Electron overflow of AlGaN deep ultraviolet light emitting diodes
Applied Physics Letters, 2021We have studied the design, epitaxy, and performance characteristics of deep ultraviolet (UV) AlGaN light emitting diodes (LEDs). By combining the tunnel junction and polarization-engineered AlGaN electron blocking layer, a maximum external quantum efficiency and wall-plug efficiency of 0.35% and 0.21%, respectively, were measured for devices operating
A. Pandey, J. Gim, R. Hovden, Z. Mi
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Simulation of deep ultraviolet light-emitting diodes
SPIE Proceedings, 2007Optical characteristics of deep ultraviolet light-emitting diodes with the consideration of spontaneous and piezoelectric polarizations are studied in this article with the APSYS (Advanced Physical Model of Semiconductor Devices) simulation program.
Yen-Kuang Kuo +2 more
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Emerging applications of deep ultraviolet light emitting diodes
UV and Higher Energy Photonics: From Materials to Applications 2021, 2021UV radiation is highly effective in killing against viruses, bacteria, algae, molds, and yeasts. They are compact, have rapid turn-off and turn-on times, and provide UV radiation at different wavelengths allowing to target specific contaminants. The deep UV LEDs (UVC LEDs) do not contain hazardous substances, such as mercury.
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